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PDM41028 Schematic ( PDF Datasheet ) - Paradigm

Teilenummer PDM41028
Beschreibung 1 Megabit Static RAM 256K x 4-Bit
Hersteller Paradigm
Logo Paradigm Logo 




Gesamt 8 Seiten
PDM41028 Datasheet, Funktion
www.DataSheet4U.com
Features
n High speed access times
Com’l: 10, 12 and 15 ns
Ind’l: 12 and 15 ns
n Low power operation (typical)
- PDM41028SA
Active: 400 mW
Standby: 150 mW
- PDM41028LA
Active: 350 mW
Standby: 100 mW
n Single +5V (±10%) power supply
n TTL-compatible inputs and outputs
n Packages
Plastic SOJ (300 mil) - TSO
Plastic SOJ (400 mil) - SO
PDM41028
1 Megabit Static RAM
256K x 4-Bit
1
Description
The PDM41028 is a high-performance CMOS static
RAM organized as 262,144 x 4 bits. Writing to this
device is accomplished when the write enable (WE)
and the chip enable (CE) inputs are both LOW.
Reading is accomplished when WE remains HIGH
and CE and OE are both LOW.
2
3
The PDM41028 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41028 comes in two versions,
the standard power version PDM41028SA and a low
power version the PDM41028LA. The two versions
are functionally the same and only differ in their
power consumption.
The PDM41028 is available in a 28-pin 300-mil SOJ,
and a 28-pin 400-mil SOJ for surface mount
applications.
4
5
6
Functional Block Diagram
Addresses
A0
A17
I/O0
I/O1
I/O2
I/O3
Decoder
Input
Data
Control
Memory
Matrix
•••••
Column I/O
CE
WE
OE
7
8
9
10
11
12
Rev. 2.2 - 4/29/98
1






PDM41028 Datasheet, Funktion
PDM41028
Write Cycle No. 1 (Write Enable Controlled)
tWC
ADDR
CE
tAW
tCW
tAH
WE
DIN
DOUT
tAS
HIGH-Z
tWP2
tDS
DATA VALID
tHZWE
HIGH-Z
tDH
tLZWE
Write Cycle No. 2 (Write Enable Controlled)
ADDR
tWC
tAW
tCW
CE
tAS
WE
tWP1
DIN
tAH
tDS
DATA VALID
tDH
DOUT
NOTE: Output Enable (OE) is inactive (high)
HIGH-Z
Write Cycle No. 3 (Chip Enable Controlled)
ADDR
CE
WE
DIN
tAW
tAS
tWC
tCW
tWP1
tDS
DATA VALID
DOUT
HIGH-Z
tAH
tDH
6
Rev. 2.2 - 4/29/98

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