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PDF AD8352 Data sheet ( Hoja de datos )
| Número de pieza | AD8352 | |
| Descripción | 2 GHz Ultra Low Distortion Differential RF/IF Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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FEATURES
−3 dB bandwidth of 2.2 GHz (AV = 10 dB)
Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB
Single resistor and capacitor distortion adjust
Input resistance: 3 kΩ, independent of gain (AV)
Differential or single-ended input to differential output
Low noise input stage: 2.7 nV/√Hz RTI @ AV = 10 dB
Low broadband distortion
10 MHz: −86 dBc HD2, −82 dBc HD3
70 MHz: −84 dBc HD2, −82 dBc HD3
190 MHz: −81 dBc HD2, −87 dBc HD3
OIP3 of 41 dBm @ 150 MHz
Slew rate: 8 V/ns
Fast settling and overdrive recovery of <2 ns
Single-supply operation: 3 V to 5.5 V
Low power dissipation: 37 mA typical @ 5 V
Power-down capability: 5 mA @ 5 V
Fabricated using the high speed XFCB3 SiGe process
APPLICATIONS
Differential ADC drivers
Single-ended-to-differential conversion
RF/IF gain blocks
SAW filter interfacing
GENERAL DESCRIPTION
The AD8352 is a high performance differential amplifier
optimized for RF and IF applications. It achieves better than
80 dB SFDR performance at frequencies up to 200 MHz, and
65 dB beyond 500 MHz, making it an ideal driver for high
speed 12-bit to 16-bit analog-to-digital converters (ADCs).
Unlike other wideband differential amplifiers, the AD8352 has
buffers that isolate the gain setting resistor (RG) from the signal
inputs. As a result, the AD8352 maintains a constant 3 kΩ input
resistance for gains of 3 dB to 25 dB, easing matching and input
drive requirements. The AD8352 has a nominal 100 Ω differential
output resistance.
2 GHz Ultralow Distortion
Differential RF/IF Amplifier
AD8352
FUNCTIONAL BLOCK DIAGRAM
RG CD
ENB
RGP
RDP
VIP
RD
VIN
RDN
RGN
BIAS CELL
VCM
VCC
+
–
Figure 1.
VOP
VON
GND
AD8352
–60 44
–65 42
–70 40
–75 38
–80 36
–85 34
–90 32
–95 30
–100
28
20 40 60 80 100 120 140 160 180 200 220
FREQUENCY (MHz)
Figure 2. Third Harmonic Distortion (HD3) and IP3 vs.
Frequency, Measured Differentially
The device is optimized for wideband, low distortion performance
at frequencies beyond 500 MHz. These attributes, together with
its wide gain adjust capability, make this device the amplifier of
choice for general-purpose IF and broadband applications
where low distortion, noise, and power are critical. It is ideally
suited for driving not only ADCs but also mixers, pin diode
attenuators, SAW filters, and multi-element discrete devices. The
device is available in a compact 3 mm × 3 mm, 16-lead LFCSP
and operates over a temperature range of −40°C to +85°C.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2006–2008 Analog Devices, Inc. All rights reserved.
1 page  
AD8352
NOISE DISTORTION SPECIFICATIONS
VS = 5 V, RL = 200 Ω differential, RG = 118 Ω (AV = 10 dB), VOUT = 2 V p-p composite, T = 25°C; parameters specified differentially, unless
otherwise noted. CD and RD are selected for differential broadband operation (see Table 5 and Table 6). See the Applications Information
section for single-ended-to-differential performance characteristics.
Table 2.
Parameter
10 MHz
Second/Third Harmonic Distortion1
Output Third-Order Intercept
Third-Order IMD
Noise Spectral Density (RTI)
1 dB Compression Point (RTO)
70 MHz
Second/Third Harmonic Distortion
Output Third-Order Intercept
Third-Order IMD
Noise Spectral Density (RTI)
1 dB Compression Point (RTO)
100 MHz
Second/Third Harmonic Distortion
Output Third-Order Intercept
Third-Order IMD
Noise Spectral Density (RTI)
1 dB Compression Point (RTO)
140 MHz
Second/Third Harmonic Distortion
Output Third-Order Intercept
Third-Order IMD
Noise Spectral Density (RTI)
1 dB Compression Point (RTO)
Conditions
RL = 1 kΩ, VOUT = 2 V p-p
RL = 200 Ω, VOUT = 2 V p-p
RL = 200 Ω, f1 = 9.5 MHz, f2 = 10.5 MHz
RL = 1 kΩ, f1 = 9.5 MHz, f2 = 10.5 MHz,
VOUT = 2 V p-p composite
RL = 200 Ω, f1 = 9.5 MHz, f2 = 10.5 MHz,
VOUT = 2 V p-p composite
RL = 1 kΩ, RG = 178 Ω, VOUT = 2 V p-p
RL = 200 Ω, RG = 115 Ω, VOUT = 2 V p-p
RL = 200 Ω, f1 = 69.5 MHz, f2 = 70.5 MHz
RL = 1 kΩ, f1 = 69.5 MHz, f2 = 70.5 MHz,
VOUT = 2 V p-p composite
RL = 200 Ω, f1 = 69.5 MHz, f2 = 70.5 MHz,
VOUT = 2 V p-p composite
RL = 1 kΩ, VOUT = 2 V p-p
RL = 200 Ω, VOUT = 2 V p-p
RL = 200 Ω, f1 = 99.5 MHz, f2 = 100.5 MHz
RL = 1 kΩ, f1 = 99.5 MHz, f2 = 100.5 MHz,
VOUT = 2 V p-p composite
RL = 200 Ω, f1 = 99.5 MHz, f2 = 100.5 MHz,
VOUT = 2 V p-p composite
RL = 1 kΩ, VOUT = 2 V p-p
RL = 200 Ω, VOUT = 2 V p-p
RL = 200 Ω, f1 = 139.5 MHz, f2 = 140.5 MHz
RL = 1 kΩ, f1 = 139.5 MHz, f2 = 140.5 MHz,
VOUT = 2 V p-p composite
RL = 200 Ω, f1 = 139.5 MHz, f2 = 140.5 MHz,
VOUT = 2 V p-p composite
Min Typ
Max Unit
−88/−95
−86/−82
38
−86
−81
2.7
15.7
dBc
dBc
dBm
dBc
dBc
nV/√Hz
dBm
−83/−84
−84/−82
40
−91
−83
2.7
15.7
dBc
dBc
dBm
dBc
dBc
nV/√Hz
dBm
−83/−83
−84/−82
40
−91
−84
2.7
15.6
dBc
dBc
dBm
dBc
dBc
nV/√Hz
dBm
−83/−82
−82/−84
41
−89
−85
2.7
15.5
dBc
dBc
dBm
dBc
dBc
nV/√Hz
dBm
Rev. B | Page 4 of 20
5 Page 
AD8352
0.6 0
0.5 –20
0.4 –40
0.3 –60
0.2 –80
0.1 –100
0 –120
0 100 200 300 400 500 600 700 800 900 1000
FREQUENCY (MHz)
Figure 16. Group Delay and Phase vs. Frequency, AV = 10 dB, RL = 200 Ω
3500
0
3000
–0.05
2500
–0.10
2000
–0.15
1500
–0.20
1000
–0.25
500 –0.30
0 –0.35
0 100 200 300 400 500 600 700 800 900 1000
FREQUENCY (MHz)
Figure 17. S11 Equivalent RC Parallel Network, RG = 115 Ω
160 0.7
140 0.6
120 0.5
100 0.4
80 0.3
60 0.2
40 0.1
20 0
0 –1.0
0 100 200 300 400 500 600 700 800 900 1000
FREQUENCY (MHz)
Figure 18. S22 Equivalent RC Parallel Network, RG = 115 Ω
1.5
ttRFAISLEL
(10/90)
(10/90)
=
=
215ps
210ps
1.0
0.5
0
–0.5
–1.0
–1.5
0
0.5 1.0 1.5 2.0 2.5 3.0
TIME (nsec)
Figure 19. Large Signal Output Transient Response, RL = 200 Ω, AV = 10 dB.
5
4
3
2
1
0
–1
–2
–3
–4
–5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TIME (nsec)
Figure 20. 1% Settling Time for a 2 V p-p Step Response,
AV = 10 dB, RL = 200 Ω
6 25
5
20
4
3 15
2
10
1
0
0
50 100 150 200 250 300 350 4005
GAIN SETTING RESISTOR (Ω)
Figure 21. Spectral Noise Density RTI and Noise Figure vs. RG, RL = 200 Ω
Rev. B | Page 10 of 20
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet AD8352.PDF ] | |
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