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GSOT12 Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GSOT12
Beschreibung (GSOT03 - GSOT36) ESD Protection Diode
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 4 Seiten
GSOT12 Datasheet, Funktion
www.DataSheet4U.com
VISHAY
ESD Protection Diode
GSOT03 to GSOT36
Vishay Semiconductors
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see IPPM below
Mechanical Data
Case: SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
3
12
18078
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 8 mg
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak power dissipation1)
Forward surge current
Test condition
8/20 µs pulse
8.3 ms single half sine-wave
1) Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03, GSOT04, the peak power dissipation is 270 W
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Operation and storage
temperature range
Test condition
Symbol
Tstg, TJ
Symbol
PPK
IFSM
Value
300
7
Unit
W
A
Value
- 55 to + 150
Unit
°C
Electrical Characteristics
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
VWM
V
GSOT03
03
3.3
GSOT04
04
4.0
GSOT05
05
5.0
GSOT08
08
8.0
GSOT12
12
12.0
GSOT15
15
15.0
GSOT24
24
24.0
GSOT36
36
36.0
1) 8/20 µs waveform used (see figure 2)
Minimum
Breakdown
Voltage
VBR
V
@ 1 mA
4.0
5.0
6.0
8.5
13.3
16.7
26.7
40
Maximum
Clamping
Voltage
VC
V
@ IP = 1 A1) @ IP = 5 A1)
6.5 7.5
8.5 10.5
9.8 12.5
13.4 15.0
19.0 28.0
24.0 35.0
43.0 60.0
60.0 75.0
Maximum
Pulse Peak
Current
tp = 8/20 µs
IPPM
A
18
17
17
15
12
10
5
2
Maximum
Leakage
Current
ID
µA
@ VWM
125
125
100
10
2
1
1
1
Maximum
Capacitance
C
pF
@ 0 V, 1 MHz
800
800
550
400
185
140
83
80
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
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