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PDF HMN2M8D Data sheet ( Hoja de datos )
| Número de pieza | HMN2M8D | |
| Descripción | Non-Volatile SRAM MODULE 16Mbit | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMN2M8D
Non-Volatile SRAM MODULE 16Mbit (2,048K x 8-Bit), 36Pin-DIP, 5V
Part No. HMN2M8D
GENERAL DESCRIPTION
The HMN2M8D Nonvolatile SRAM is a 16,777,216-bit static RAM organized as 2,097,152 bytes by 8 bits.
The HMN2M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after VCC returns valid.
The HMN2M8D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, 120, 150ns
w High-density design : 16Mbit Design
w Battery internally isolated until power is applied
w Industry-standard 36-pin 2,048K x 8 pinout
w Unlimited write cycles
w Data retention in the absence of VCC
w 5-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Industrial temperature operation
w Timing
70 ns
- 70
85 ns
120 ns
- 85
-100
150 ns
-150
PIN ASSIGNMENT
NC 1
A20 2
A18 3
A16 4
A14 5
A12 6
A7 7
A6 8
A5 9
A4 10
A3 11
A2 12
A1 13
A0 14
DQ0 15
DQ1 16
DQ2 17
VSS 18
36 VCC
35 A19
34 NC
33 A15
32 A17
31 /WE
30 A13
29 A8
28 A9
27 A11
26 /OE
25 A10
24 /CE
23 DQ7
22 DQ6
21 DQ5
20 DQ4
19 DQ3
36-pin Encapsulated Package
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
1 HANBit Electronics Co.,Ltd
1 page  
HANBit
HMN2M8D
READ CYCLE (TA= TOPR, VCCmin £ VCC≤ VCCmax )
PARAMETER
SYMBOL CONDITIONS
-70
MIN MAX
Read Cycle Time
Address Access Time
Chip enable access time
Output enable to Output valid
Chip enable to output in low Z
tRC 70 -
tACC Output load A - 70
tACE Output load A - 70
tOE Output load A - 35
tCLZ
Output load B
5
-
Output enable to output in low Z
tOLZ
Output load B
5
-
Chip disable to output in high Z
tCHZ Output load B 0 25
Output disable to output high Z
tOHZ Output load B 0 25
Output hold from address change
tOH
Output load A 10
-
-85
MIN MAX
85 -
- 85
- 85
- 45
5-
0-
0 35
0 25
10 -
-120
MIN MAX
120 -
- 120
- 120
- 60
5-
0-
0 45
0 35
10 -
-150
MIN MAX
150 -
- 150
- 150
- 70
10 -
5-
0 60
0 50
10 -
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE (TA= TOPR, Vccmin £ Vcc ≤ Vccmax )
PARAMETER
SYMBOL CONDITIONS
-70
MIN MAX
-85
MIN MAX
-120
MIN MAX
-150
Min Max
Write Cycle Time
tWC
70 - 85 - 120 - 150 -
Chip enable to end of write
tCW
Note 1
65 - 75 - 100 - 100 -
Address setup time
tAS
Note 2
0-0-0-0-
Address valid to end of write
tAW
Note 1
65 - 75 - 100 - 90 -
Write pulse width
tWP
Note 1
55 - 65 - 85 - 90 -
Write recovery time (write cycle 1)
tWR1
Note 3
5-5-5-5-
Write recovery time (write cycle 2)
tWR2
Note 3
15 - 15 - 15 - 15 -
Data valid to end of write
tDW
30 - 35 - 45 - 50 -
Data hold time (write cycle 1)
tDH1
Note 4
0-0-0-0-
Data hold time (write cycle 2)
tDH2
Note 4
10 - 10 - 10 - 0 -
Write enabled to output in high Z
tWZ
Note 5
0 25 0 30 0 40 0 50
Output active from end of write
tOW
Note 5
5-0-0-5-
NOTE: 1. A write ends at the earlier transition of /CE going high and /WE going high.
2. A write occurs during the overlap of allow /CE and a low /WE. A write begins at the later transition of /CE
going low and /WE going low.
3. Either tWR1 or tWR2 must be met.
4. Either tDH1 or tDH2 must be met.
5. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain in high-
impedance state.
UNI
T
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
5 HANBit Electronics Co.,Ltd
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMN2M8D.PDF ] | |
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