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PDF PBSS8110X Data sheet ( Hoja de datos )
| Número de pieza | PBSS8110X | |
| Descripción | NPN transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
SOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
DC-to-DC converter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 1 A;
IB = 100 mA
Min Typ Max
- - 100
--1
--3
[1] -
165 200
Unit
V
A
A
mΩ
1 page  
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.2 0.33
10 0.1
0.05
0.02
0.01
10
006aaa411
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB; mounting pad for collector 6cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
102
Zth(j-a)
(K / W)
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa410
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS8110X_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
9. Package outline
PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
4.6
4.4 1.6
1.8 1.4
1.4
2.6
2.4
1
0.53
0.40
1.5
Dimensions in mm
2
3
1.2
3 0.8
0.48
0.35
Fig 18. Package outline SOT89 (SC-62/TO-243)
4.25
3.75
0.44
0.23
06-08-29
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
PBSS8110X
SOT89
8 mm pitch, 12 mm tape and reel
Packing quantity
1 000
4 000
-115 -135
[1] For further information and the availability of packing methods, see Section 15.
PBSS8110X_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PBSS8110X.PDF ] | |
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