|
|
PDF APT50GP60J Data sheet ( Hoja de datos )
| Número de pieza | APT50GP60J | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APT50GP60J (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
APT50GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 19A
• 100 kHz operation @ 400V, 26A
• SSOA rated
EE
G C SOT-227
ISOTOP®
"UL Recognized"
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
46
190
190A@600V
329
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
600
3 4.5 6
2.2 2.7
2.1
500
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
1 page  
TYPICAL PERFORMANCE CURVES
10,000
Cies
5,000
1,000
500
Coes
100
50 Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT50GP60J
200
180
160
140
120
100
180
160
140
120
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.20
0.16
0.12
0.08
0.04
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp. ( ”C)
Power
(Watts)
RC MODEL
0.0775
0.216
0.0158F
0.313F
210
100
50
Case temperature
0.0855
4.49F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
10
10 20 30 40 50 60 70 80
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Fmax = min(fmax1, fmax 2 )
f max 1
=
t d (on )
0.05
+ t r + t d(off )
+ tf
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
Pdiss
=
TJ − TC
R θJC
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT50GP60J.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APT50GP60B | POWER MOS 7 IGBT | Advanced Power Technology |
| APT50GP60B2DF2 | POWER MOS 7 IGBT | Advanced Power Technology |
| APT50GP60B2DQ2 | POWER MOS 7 IGBT | Advanced Power Technology |
| APT50GP60B2DQ2G | POWER MOS 7 IGBT | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |