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PDF ECP050G Data sheet ( Hoja de datos )
| Número de pieza | ECP050G | |
| Descripción | High Linearity InGaP HBT Amplifier | |
| Fabricantes | WJ Communication | |
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AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x MTTF > 100 Years
x Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x Mobile Infrastructure
x Final Stage Amplifier for
Repeaters
Specifications (1)
The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
1
2
3
4
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Typical Performance (1)
8
7
6
5
Pin No.
1
3
6, 7
8
Backside
Paddle
2, 4, 5
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range (3)
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Min
1800
12.5
+26.5
+41
200
Typ
2140
14.4
23
8
+28.5
+42
+22.5
+20
5.3
250
+5
Max
2300
300
1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR,
W-CDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
14.3 14.4
-12 -23
-8 -8
+28.3
+28.5
+44 +42
+22.5
+20
5 5.3
+5 V @ 250 mA
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+22 dBm
+8 V
400 mA
2W
+250 qC
Part No.
AH115-S8
ECP050G
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
Page 1 of 7 May 2005
1 page  
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
AH115-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an
“AH115-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes § 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235¦ C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135” ) diameter
drill and have a final plated thru diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85q C
Thermal Resistance (1), Rth
62q C / W
Junction Temperature (2), Tjc
162q C
Notes:
1. The thermal resistance is referenced from the junction-to-
case at a case temperature of 85¦ C. Tjc is a function of the
voltage at pins 6 and 7 and the current applied to pins 6, 7,
and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85¦ C case temperature. A minimum MTTF
of 1 million hours is achieved for junction temperatures
below 247¦ C.
1000000
MTTF vs. GND Tab Temperature
100000
10000
1000
100
50
60 70 80 90
Tab Temperature (°C )
100
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
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Page 5 of 7 May 2005
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