|
|
Número de pieza | NTD32N06 | |
Descripción | N-Channel DPAK | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTD32N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! www.DataSheet4U.com
NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
• Smaller Package than MTB36N06V
• Lower RDS(on)
• Lower VDS(on)
• Lower Total Gate Charge
• Lower and Tighter VSD
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage, Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
Vdc
Vdc
Vdc
32
22
90
93.75
0.625
2.88
1.5
−55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (Note 3)
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
313 mJ
1.6 °C/W
52
100
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
3. Repetitive rating; pulse width limited by maximum junction temperature.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
26 mW
ID MAX
32 A
N−Channel
D
G
S
4
12
3
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
DPAK−3
CASE 369D
STYLE 2
4
Drain
1
2
3
12 3
Gate Drain Source
32N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD32N06/D
1 page 10
Normalized to RqJC at Steady State
NTD32N06
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to RqJA at Steady State,
1″ square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1
Figure 14. Thermal Response
10 100 1000
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTD32N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTD32N06 | N-Channel DPAK | ON Semiconductor |
NTD32N06L | Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK) | ON |
NTD32N06LT4 | Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK) | ON |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |