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Número de pieza | RHP020N06 | |
Descripción | Drive Nch MOS FET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RHP020N06 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistors
4V Drive Nch MOS FET
RHP020N06
RHP020N06
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RHP020N06
Taping
T100
1000
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6 1.5
(1)Gate
(2)Drain
(3)Source
(1) (2)
(3)
0.4 0.5
1.5 1.5
3.0
0.4
Abbreviated symbol : LR
0.4
zInner circuit
DRAIN
GATE
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
PD
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
Tch
Tstg
∗1
SOURCE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
60
±20
±2
±8
2
8
500
2
150
−55 to +150
Unit
V
V
A
A
A
A
mW
W ∗2
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40 40 0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5
Unit
°C/W
°C/W
∗
1/2
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet RHP020N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
RHP020N06 | Drive Nch MOS FET | ROHM Semiconductor |
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