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PDF AT28HC256N Data sheet ( Hoja de datos )

Número de pieza AT28HC256N
Descripción High-speed Parallel EEPROM
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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Features
Fast Read Access Time – 90 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 3 ms Maximum
– 1 to 64-byte Page Write Operation
Low Power Dissipation: 300 µA Standby Current (CMOS)
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 105 Cycles
– Data Retention: 10 Years
Single 5V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Description
The AT28HC256N is a high-performance electrically erasable and programmable read
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers
access times to 90 ns with power dissipation of just 440 mW. When the AT28HC256N
is deselected, the standby current is less than 3 mA.
The AT28HC256N is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64
bytes of data are internally latched, freeing the addresses and data bus for other oper-
ations. Following the initiation of a write cycle, the device will automatically write the
latched data using an internal control timer. The end of a write cycle can be detected
by DATA Polling of I/O7. Once the end of a write cycle has been detected a new
access for a read or write can begin.
Atmel’s AT28HC256N has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
Pin Configurations
Pin Name
A0 - A14
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
LCC, PLCC
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
256 (32K x 8)
High-speed
Parallel
EEPROM
AT28HC256N
3446B–PEEPR–4/04

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AT28HC256N pdf
DC and AC Operating Range
Operating Industrial Temperature (Case)
VCC Power Supply
Operating Modes
Mode
Read
Write(2)
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Chip Erase
Notes: 1. X can be VIL or VIH.
2. Refer to AC programming waveforms.
3. VH = 12.0V ±0.5V.
DC Characteristics
Symbol
ILI
ILO
ISB1
ISB2
ICC
VIL
VIH
VOL
VOH
Parameter
Input Load Current
Output Leakage Current
VCC Standby Current TTL
VCC Standby Current CMOS
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
AT28HC256N-90
-40°C - 85°C
5V ±10%
CE OE
VIL VIL
VIL VIH
VIH X(1)
XX
X VIL
X VIH
VIL VH(3)
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = 2.0V to VCC
CE = VCC - 0.3V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 6.0 mA
IOH = -4 mA
AT28HC256N
AT28HC256N-12
-40°C - 85°C
5V ±10%
WE I/O
VIH DOUT
VIL DIN
X High Z
VIH
X
X High Z
VIL High Z
Min Max Units
10 µA
10 µA
3 mA
300 µA
30 mA
0.8 V
2.0 V
0.45 V
2.4 V
3446B–PEEPR–4/04
5

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AT28HC256N arduino
Ordering Information(1)
tACC
ICC (mA)
(ns)
Active
Standby
90 30
0.3
Ordering Code
AT28HC256N-90JI
120 30
0.3
AT28HC256N-12JI
Note: 1. See “Valid Part Numbers” table below.
AT28HC256N
Package
32J
32J
Operation Range
Industrial
(-40°C to 85°C)
Industrial
(-40°C to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier (PLCC)
Valid Part Numbers
The following table lists standard Atmel products that can be ordered:
Device Numbers
Speed
Package and Temperature Combinations
AT28HC256N
90 JI
AT28HC256N
12 JI
3446B–PEEPR–4/04
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