|
|
PDF EDI8L21664V Data sheet ( Hoja de datos )
| Número de pieza | EDI8L21664V | |
| Descripción | External SRAM Memory Solution | |
| Fabricantes | EDI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EDI8L21664V (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Features
DSP Memory Solution
• Texas Instruments TMS320C54x
3.3V Operating Supply Voltage
Access Times of 10, 12 and 15ns
Single Write Control and Output Enable Lines
One Chip Enable Line per Memory Bank
50% Space Savings vs. Monolithic TSOPs
Upgrade Path Available in Same Footprint
Multiple VCC and VSS Pins
Reduced Inductance and Capacitance
74 pin BGA, JEDEC MO-151
EDI8L21664V
2x64Kx16 SRAM
TMS320C54x External SRAM
Memory Solution
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM
constructed with two 64Kx16 die mounted on a multi-
layer laminate substrate. The device is packaged in a 74
lead, 15mm by 15mm, BGA.
Operating with a 3.3V power supply and with access
times as fast as 10ns, the device allows the user to
develop a fast external memory for Texas Instuments'
TMS320C54x DSP.
The device consists of two separate banks of 64Kx16 of
memory. Each bank has a separate Chip Enable pin and
higher order address select pin. Bank 'A' is controlled
using CE1\ and A15A. Bank 'B' is controlled using CE2\
and A15B. The two banks have common I/Os (DQ0-15)
and control lines (WE\ and G\).
Pin Configurations
1 2 3 4 5 6 7 8 9 10 11
A VSS VCC VCC DQ15 DQ14 VCC DQ13 DQ11 DQ9 DQ8 N/C A
B VSS VCC VCC VSS VSS VCC DQ12 DQ10 DQ4 VCC VCC B
C VSS VSS VCC VSS VCC C
D VSS VSS
VSS VCC D
E VSS VSS
VSS VCC E
F A15A CE1\
DQ3 DQ7 F
G N/C WE\
DQ5 DQ0 G
H VSS CE2\
DQ6 DQ1 H
J VSS A14 VCC DQ2 N\C J
K VSS A12 VCC A10 A8 VSS A6 A4 A2 A0 G\ K
L A15B A13 VCC A11 A9 VSS A7 VSS A5 A3 A1 L
1 2 3 4 5 6 7 8 9 10 11
Electronic Designs Incorporated
• One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX 508-836-4850 •
http://www.electronic-designs.com
1
EDI8L21664V Rev. 0 1/98 ECO #9704
1 page  
EDI8L21664V
2x64Kx16 SRAM
Write Cycle 1 - W Controlled
A
E
W
TAVWL
D
Q
TAVAV
TELWH
TAVWH
TWLWH
TWHAX
TWLQZ
TDVWH
DATA VALID
TWHDX
HIGH Z
TWHQX
Write Cycle 2 - E Controlled
TAVAV
A
TAVEL
TELEH
E
TAVEH
TWLEH
W
TDVEH
D DATA VALID
HIGH Z
Q
TEHAX
TEHDX
5
EDI8L21664V Rev. 0 1/98 ECO #9704
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EDI8L21664V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EDI8L21664V | External SRAM Memory Solution | EDI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |