(PDF) PBSS8110S Datasheet - NPN low VCEsat (BISS) transistor

Número de pieza	PBSS8110S
Descripción	NPN low VCEsat (BISS) transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS8110S 100 V, 1 A NPN low VCEsat (BISS) transistor Product speciﬁcation Supersedes data of 2003 Nov 11 2004 Aug 13 1 page Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads Product speciﬁcation PBSS8110S SOT54 c E d 1 2 D 3 b1 AL L1 b e1 e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c Dd mm 5.2 5.0 0.48 0.66 0.45 0.40 0.55 0.38 4.8 4.4 1.7 1.4 E e e1 L L1(1) max. 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION IEC REFERENCES JEDEC JEITA EUROPEAN PROJECTION SOT54 TO-92 SC-43A ISSUE DATE 97-02-28 04-06-28 2004 Aug 13 5 5 Page

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PDF PBSS8110S Data sheet ( Hoja de datos )