|
|
Teilenummer | PBSS8110D |
|
Beschreibung | NPN low VCEsat (BISS) transistor | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten www.DataSheet4U.com
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 23 April 2004
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
s SOT457 package
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency, leading to less heat generation.
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial.
s DC-to-DC converter
s Peripheral driver
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load drivers (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1A
- - 3A
- - 200 mΩ
Philips Semiconductors
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
600
hFE
400
200
001aaa497
(1)
(2)
(3)
1000
VBE
(mV)
800
600
400
001aaa495
(1)
(2)
(3)
0
10−1
1
10 102 103 104
IC (mA)
VCE = 10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 3. DC current gain as a function of collector
current; typical values.
103 001aaa504
200
10−1
1
10 102 103 104
IC (mA)
VCE = 10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 4. Base-emitter voltage as a function of collector
current; typical values.
103 001aaa505
VCEsat
(mV)
VCEsat
(mV)
102
(1)
(2)
(3)
102
10
10−1
1
10 102 103 104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values.
10
10−1
1
10 102
IC/IB = 20; Tamb = 25 °C.
103 104
IC (mA)
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12566
Product data sheet
Rev. 01 — 23 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6 of 12
6 Page Philips Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information . . . . . . . . . . . . . . . . . . . . 11
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 April 2004
Document order number: 9397 750 12566
Published in The Netherlands
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PBSS8110D Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PBSS8110D | NPN low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS8110S | NPN low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS8110T | NPN low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS8110X | NPN transistor | NXP Semiconductors |
PBSS8110Y | NPN low VCEsat (BISS) transistor | NXP Semiconductors |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |