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Teilenummer | RN6002 |
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Beschreibung | Motor Drive Circuit Applications | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 3 Seiten www.DataSheet4U.com
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6002
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5002
Equivalent Circuit
RN6002
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Maximum Ratings (Ta = 25°C)
Marking
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−5
Collector current
IC −2
Base current
IB −0.4
Collector power dissipation
PC 500
Collector power dissipation
PC *
1000
Junction temperature
Tj 150
Storage temperature range
Tstg −55~150
* : Mounterd on ceramic substrate (250mm2 × 0.8t)
Unit
V
V
V
A
A
mW
mW
°C
°C
1 2001-10-29
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ RN6002 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RN6001 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN6002 | Motor Drive Circuit Applications | Toshiba Semiconductor |
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