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PDF R1LV0416CBG-I Data sheet ( Hoja de datos )
| Número de pieza | R1LV0416CBG-I | |
| Descripción | Wide Temperature Range Version 4M SRAM | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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R1LV0416CBG-I Series
Wide Temperature Range Version
4M SRAM (256-kword × 16-bit)
REJ03C0259-0001
Preliminary
Rev.0.01
Jan.11.2005
Description
The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized
higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch).
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 1.25 µW (typ) (VCC = 2.5 V)
: 1.5 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
• Access and cycle times are equal.
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1LV0416CBG-5SI
R1LV0416CBG-7LI
Access time
55 ns
70 ns
Package
48-ball CSP with 0.75 mm ball pitch (48FHH)
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology’s Sales Dept. regarding specifications.
Rev.0.01, Jan.11.2005, page 1 of 14
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R1LV0416CBG-I Series
DC Characteristics
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
Output leakage current
Operating current
Average operating current
|ILI| 1 µA Vin = VSS to VCC
|ILO| 1 µA CS1# = VIH or CS2 = VIL or
OE# = VIH or WE# = VIL or
LB# = UB# = VIH,
VI/O = VSS to VCC
ICC 5*1 20 mA CS1# = VIL, CS2 = VIH,
Others = VIH/VIL, II/O = 0 mA
ICC1 8*1 25 mA Min. cycle, duty = 100%,
II/O = 0 mA, CS1# = VIL,
CS2 = VIH,
Others = VIH/VIL
ICC2 2*1 5 mA Cycle time = 1 µs,
duty = 100%,
Standby current
Standby current
Output high voltage
−5SI to +85°C
to +70°C
to +40°C
to +25°C
−7LI to +85°C
to +70°C
to +40°C
to +25°C
VCC =2.2 V to 2.7 V
VCC =2.7 V to 3.6 V
VCC =2.2 V to 3.6 V
ISB
ISB1
ISB1
ISB1
ISB1
ISB1
ISB1
ISB1
ISB1
VOH
VOH
VOH2
II/O = 0 mA, CS1# ≤ 0.2 V,
CS2 ≥ VCC − 0.2 V
VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V
0.1*1 0.3 mA CS2 = VIL
10 µA Vin ≥ 0 V
8 µA (1) 0 V ≤ CS2 ≤ 0.2 V or
0.7*2 3 µA (2) CS1# ≥ VCC − 0.2 V,
0.5*1 2.5 µA CS2 ≥ VCC − 0.2 V or
20 µA (3) LB# = UB# ≥ VCC − 0.2 V,
16 µA
CS2 ≥ VCC − 0.2 V,
0.7*2 10 µA CS1# ≤ 0.2 V
0.5*1 10 µA
2.0 — — V IOH = −0.5 mA
2.4 — — V IOH = −1 mA
VCC − 0.2 — — V IOH = −100 µA
Output low voltage VCC =2.2 V to 2.7 V
VOL
— — 0.4 V IOL = 0.5 mA
VCC =2.7 V to 3.6 V
VOL
— — 0.4 V IOL = 2 mA
VCC =2.2 V to 3.6 V
VOL2
— — 0.2 V IOL = 100 µA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
Capacitance
Parameter
Symbol Min Typ Max Unit
Input capacitance
Cin 8 pF
Input/output capacitance
CI/O 10 pF
Note: 1. This parameter is sampled and not 100% tested.
(Ta = +25°C, f = 1.0 MHz)
Test conditions
Note
Vin = 0 V
1
VI/O = 0 V
1
Rev.0.01, Jan.11.2005, page 5 of 14
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R1LV0416CBG-I Series
Write Timing Waveform (3) (LB#, UB# Clock, OE# = VIH)
Address
CS1#
tWC
Valid address
tAW
tCW*5
tCW*5
CS2
LB#, UB#
tAS*6
tBW
tWR*7
WE#
Din
Dout
tWP*4
tDW tDH
Valid data
High impedance
Rev.0.01, Jan.11.2005, page 11 of 14
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