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AD8250 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer AD8250
Beschreibung programmable instrumentation amplifier
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 24 Seiten
AD8250 Datasheet, Funktion
Data Sheet
10 MHz, 20 V/μs, G = 1, 2, 5, 10 iCMOS
Programmable Gain Instrumentation Amplifier
AD8250
FEATURES
Small package: 10-lead MSOP
Programmable gains: 1, 2, 5, 10
Digital or pin-programmable gain setting
Wide supply: ±5 V to ±15 V
Excellent dc performance
High CMRR 98 dB (minimum), G = 10
Low gain drift: 10 ppm/°C (maximum)
Low offset drift: 1.7 μV/°C (maximum), G = 10
Excellent ac performance
Fast settling time: 615 ns to 0.001% (maximum)
High slew rate: 20 V/µs (minimum)
Low distortion: −110 dB THD at 1 kHz
High CMRR over frequency: 80 dB to 50 kHz (minimum)
Low noise: 18 nV/√Hz, G = 10 (maximum)
Low power: 4.1 mA
APPLICATIONS
Data acquisition
Biomedical analysis
Test and measurement
GENERAL DESCRIPTION
The AD8250 is an instrumentation amplifier with digitally
programmable gains that has GΩ input impedance, low output
noise, and low distortion making it suitable for interfacing with
sensors and driving high sample rate analog-to-digital converters
(ADCs). It has a high bandwidth of 10 MHz, low THD of −110
dB and fast settling time of 615 ns (maximum) to 0.001%. Offset
drift and gain drift are guaranteed to 1.7 μV/°C and 10 ppm/°C,
respectively, for G = 10. In addition to its wide input common
voltage range, it boasts a high common-mode rejection of 80 dB
at G = 1 from dc to 50 kHz. The combination of precision dc
performance coupled with high speed capabilities makes the
AD8250 an excellent candidate for data acquisition. Furthermore,
this monolithic solution simplifies design and manufacturing
and boosts performance of instrumentation by maintaining a
tight match of internal resistors and amplifiers.
The AD8250 user interface consists of a parallel port that allows
users to set the gain in one of two ways (see Figure 1). A 2-bit word
sent via a bus can be latched using the WR input. An alternative is
to use the transparent gain mode where the state of the logic levels
at the gain port determines the gain.
FUNCTIONAL BLOCK DIAGRAM
–IN 1
DGND WR A1 A0
26
54
LOGIC
7 OUT
+IN 10
8
+VS
25
20
15
AD8250
3
–VS
Figure 1.
9
REF
G = 10
G=5
10
G=2
5
G=1
0
–5
–10
1k
10k 100k 1M
FREQUENCY (Hz)
Figure 2. Gain vs. Frequency
10M
100M
Table 1. Instrumentation Amplifiers by Category
General
Purpose
Mil
Zero Drift Grade
Low
Power
High Speed
PGA
AD82201
AD82311
AD620
AD6271
AD8250
AD8221
AD85531
AD621
AD6231
AD8251
AD8222
AD85551
AD524
AD82231
AD8253
AD82241
AD85561
AD526
AD8228
AD85571
AD624
1 Rail-to-rail output.
The AD8250 is available in a 10-lead MSOP package and is
specified over the −40°C to +85°C temperature range, making
it an excellent solution for applications where size and packing
density are important considerations.
Rev. C
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2007–2013 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com






AD8250 Datasheet, Funktion
AD8250
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Power Dissipation
Output Short-Circuit Current
Common-Mode Input Voltage
Differential Input Voltage
Digital Logic Inputs
Storage Temperature Range
Operating Temperature Range3
Lead Temperature (Soldering, 10 sec)
Junction Temperature
θJA (Four-Layer JEDEC Standard Board)
Package Glass Transition Temperature
Rating
±17 V
See Figure 4
Indefinite1
+VS + 13 V, −VS − 13 V
+VS + 13 V, −VS − 13 V2
±VS
−65°C to +125°C
−40°C to +85°C
300°C
140°C
112°C/W
140°C
1 Assumes that the load is referenced to midsupply.
2 Current must be kept to less than 6 mA.
3 Temperature for specified performance is −40°C to +85°C. For performance
to 125°C, see the Typical Performance Characteristics section.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8250 package is
limited by the associated rise in junction temperature (TJ) on
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8250. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (θJA),
the ambient temperature (TA), and the total power dissipated in
the package (PD) determine the junction temperature of the die.
The junction temperature is calculated as
TJ = TA + (PD × θJA)
Data Sheet
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming that the load (RL) is referenced
to midsupply, the total drive power is VS/2 × IOUT, some of which
is dissipated in the package and some in the load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive Power Load Power)
( )PD =
VS × IS
+

VS
2
×
VOUT
RL

VOUT
RL
2
In single-supply operation with RL referenced to −VS, the worst
case is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a four-layer JEDEC
standard board.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–40 –20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. C | Page 6 of 24

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AD8250 pdf, datenblatt
AD8250
+VS
–1
+125°C
–2
+85°C
+25°C
–40°C
+2
+85°C
+1
+25°C –40°C
–VS
4
+125°C
6 8 10 12 14 16
SUPPLY VOLTAGE (±VS)
Figure 30. Input Voltage Limit vs. Supply Voltage, G = 1, VREF = 0 V, RL = 10 kΩ
15
10
FAULT CONDITION
(OVER DRIVEN INPUT)
5 G = 10
0
–5
+VS
FAULT CONDITION
(OVER DRIVEN INPUT)
G = 10
+IN
–IN
–10
–15
–16
–12 –8
–4
0
4
8
DIFFERENTIAL INPUT VOLTAGE (V)
–VS
12 16
Figure 31. Fault Current Draw vs. Input Voltage, G = 10, RL = 10 kΩ
+VS
–0.2
–0.4
–0.6
–0.8
–1.0
+125°C
+85°C
+25°C
–40°C
+1.0
+0.8
+0.6
+0.4
+0.2
–VS
4
+85°C
+25°C
–40°C
+125°C
6 8 10 12 14 16
SUPPLY VOLTAGE (±VS)
Figure 32. Output Voltage Swing vs. Supply Voltage, G = 10, RL = 2 kΩ
+VS
–0.2
–0.4
–0.6
–0.8
–1.0
+85°C
+125°C
Data Sheet
+25°C
–40°C
+1.0
+0.8
+0.6
+0.4
+0.2
–VS
4
+25°C
–40°C
+125°C
+85°C
6 8 10 12
SUPPLY VOLTAGE (±VS)
14
16
Figure 33. Output Voltage Swing vs. Supply Voltage, G = 10, RL = 10 kΩ
15 +25°C
10
–40°C
5
+85°C
+125°C
0
+85°C
–5
+125°C
–10
–40°C
–15
100
+25°C
1k
LOAD RESISTANCE ()
10k
Figure 34. Output Voltage Swing vs. Load Resistance
+VS
–0.4 +85°C +125°C
–0.8
–1.2
–1.6
+25°C –40°C
–2.0
+2.0
+1.6
+1.2
–40°C +25°C
+0.8
+0.4
+85°C +125°C
–VS 0 2 4 6 8 10 12
OUTPUT CURRENT (mA)
14
Figure 35. Output Voltage Swing vs. Output Current
16
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