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PDF PBLS2001D Data sheet ( Hoja de datos )
| Número de pieza | PBLS2001D | |
| Descripción | 20 V PNP BISS loadswitch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PBLS2001D (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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PBLS2001D
20 V PNP BISS loadswitch
Rev. 01 — 5 July 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = −1 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
-
-
[1] -
-
-
185
--
--
1.54 2.2
0.8 1
Max Unit
−20 V
−1 A
280 mΩ
50 V
100 mA
2.86 kΩ
1.2
1 page  
Philips Semiconductors
PBLS2001D
www.DataSheet4U.com
20 V PNP BISS loadswitch
103
Zth(j-a)
(K/W)
102
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
006aaa463
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
103
Zth(j-a)
(K/W) δ = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
0
006aaa464
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
PBLS2001D_1
Product data sheet
Rev. 01 — 5 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
8. Test information
PBLS2001D
www.DataSheet4U.com
20 V PNP BISS loadswitch
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td tr
t on
Fig 17. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω
Fig 18. Test circuit for switching times
PBLS2001D_1
Product data sheet
Rev. 01 — 5 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PBLS2001D.PDF ] | |
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