|
|
PDF PDTA123E Data sheet ( Hoja de datos )
| Número de pieza | PDTA123E | |
| Descripción | PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PDTA123E (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
DataSheet4U.com
DataShee
PDTA123E series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product specification
Supersedes data of 2004 Apr 07
2004 Aug 02
DataSheet4U.com
1 page  
www.DataSheet4U.com
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product specification
PDTA123E series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
Tamb ≤ 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
250
500
500
625
830
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
et4U.com
SYMBOL
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
CONDITIONS
VDCaBta=S−h5e0etV4;UIE.c=om0 A
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A; Tj = 150 °C
VEB = −5 V; IC = 0 A
VCE = −5 V; IC = −20 mA
IC = −10 mA; IB = −0.5 mA
IC = −1 mA; VCE = −5 V
IC = −20 mA; VCE = −0.3 V
MIN.
−
−
−
−
30
−
−
−2
1.54
TYP.
−
−
−
−
−
−
−1.2
−1.6
2.2
MAX. UNIT
−100
−1
−50
−2
−
−150
−0.5
−
2.86
nA
µA
µA
mA
mV
V
V
kΩ
RR-----21-- resistor ratio
0.8 1
1.2
Cc collector capacitance
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
− − 3 pF
DataShee
DataSheet42U00.c4oAmug 02
5
5 Page 
www.DataSheet4U.com
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic surface mounted package; 3 leads
Product specification
PDTA123E series
SOT23
DB
E AX
et4U.com
3
1
e1 bp
e
HE v M A
DataSheet4U.com
2
wM B
A
A1
Q
detail X
Lp
c
DataShee
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
DataSheet42U00.c4oAmug 02
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PDTA123E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PDTA123E | PNP resistor-equipped transistors | NXP Semiconductors |
| PDTA123ET | PNP resistor-equipped transistor | NXP Semiconductors |
| PDTA123J | PNP resistor-equipped transistors | NXP Semiconductors |
| PDTA123JE | PNP resistor-equipped transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |