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PDF AMMC-6440 Data sheet ( Hoja de datos )
| Número de pieza | AMMC-6440 | |
| Descripción | 37 - 42 GHz Power Amplifier | |
| Fabricantes | Hewlett-Packard | |
| Logotipo |  |
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Agilent AMMC-6440
37 – 42 GHz Power Amplifier
Data Sheet
Description
The AMMC-6440 MMIC is a
broadband 1W power amplifier
designed for use in
transmitters that operate in
various frequency bands
between 37GHz and 42GHz.
This MMIC optimized for linear
operation with an output third
order intercept point (OIP3) of
38dBm. At 42GHz it provides
28dBm of output power (P-
1dB) and 14dB of gain. The
device has input and output
matching circuitry for use in
50 Ω environments. The
AMMC-6440 also integrates a
Chip Size: 2500 x 1750 mm (100 x 69 mils)
Chip Size Tolerance: ± 10mm (±0.4 mils)
Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 mm (4 ± 0.4 mils)
temperature compensated RF
power detection circuit that
enables power detection of
0.25V/W. DC bias is simple
and the device operates on
widely aDvaatailSahbeleet54.U5V.cofomr
current supply (negative
voltage only needed for Vg).
It is fabricated in a PHEMT
process for exceptional power
and gain performance.
Features
• Wide frequency range: 37 - 42 GHz
• High gain: 14 dB
• Power: @42 GHz, P-1dB=28 dBm
• Highly linear: OIP3=39dBm
• Integrated RF power detector
• 5.5 Volt, -0.7 Volt, 950mA
operation
Applications
• Microwave Radio systems
• LMDS & Pt-Pt mmW Long Haul
• 802.16 & 802.20 WiMax BWA
• WLL and MMDS loops
• Commercial grade military
• Can be driven by AMMC-6345,
increasing overall gain.
AMMC-6440 Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions Units
Min.
Vd
Positive Drain Voltage
V
Vg
Gate Supply Voltage
V
-3
Id
Drain Current
mA
Pin
CW Input Power
dBm
Tch Operating Channel Temp. °C
Tstg
Storage Case Temp.
°C
-65
Tmax Maximum Assembly Temp °C
(60 sec max)
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Max.
7
0.5
1500
23
+150
+150
+300
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Note: These devices are ESD sensitive. The following precautions are strongly recommended.
Ensure that an ESD approved carrier is used when dice are transported from one destination to
another. Personal grounding is to be worn at all times when handling these devices
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Biasing and Operation
The recommended quiescent
DC bias condition for optimum
efficiency, performance, and
reliability is Vd=5.5 volts with
Vg set for Id=950 mA. Minor
improvements in performance
are possible depending on the
application. The drain bias
voltage range is 3 to 5.5V. A
single DC gate supply
connected to Vg will bias all
gain stages. Muting can be
accomplished by setting Vg and
/or Vg to the pinch-off voltage
Vp.
An optional output power
detector network is also
provided. The differential
voltage between the Det-Ref
and Det-Out pads can be
correlated with the RF power
emerging from the RF output
port. The detected voltage is
given by :
( )V = Vref − Vdet − Vofs
where Vref is the voltage at the
DET _ R port, Vdet is a voltage at
the DET _ O port, and Vofs is the
zero-input-power offset
voltage. There are three
methods to calculate :
1. Vofs can be measured before
each detector measurement
(by removing or switching
off the power source and
measuring ). This method
gives an error due to
temperature drift of less
than 0.01dB/50°C.
2. Vofs can be measured at a
single reference temperature.
The drift error will be less
than 0.25dB.
3. Vofs can either be
characterized over
temperature and stored in a
lookup table, or it can be
measured at two
temperatures and a linear
fit used to calculate at any
temperature. This method
gives an error close to the
method #1.
The RF ports are AC coupled
at the RF input to the first
stage and the RF output of the
final stage. No ground wired
are needed since ground
connections are made with
plated through-holes to the
backside of the device.
Assembly Techniques
The backside of the MMIC chip
is RF ground. For microstrip
applications the chip should be
attached directly to the ground
plane (e.g. circuit carrier or
heatsink) using electrically
conductive epoxy [1]
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
TmhoiusnctainnDgabtaeaSgahocelcdeotmp4lUpal.tciesohmmedetably
shim (same length and width
as the MMIC) under the chip
which is of correct thickness
to make the chip and adjacent
circuit the same height. The
amount of epoxy used for the
chip and/or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip
or shim. The ground plain
should be free of any residue
that may jeopardize electrical
or mechanical attachment.
The location of the RF bond
pads is shown in Figure 12.
Note that all the RF input and
output ports are in a Ground-
Signal configuration.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single
bond wire is normally
sufficient for signal
connections, however double
bonding with 0.7 mil gold wire
or use of gold mesh [2] is
recommended for best
performance, especially near
the high end of the frequency
band.
Thermosonic wedge bonding is
preferred method for wire
attachment to the bond pads.
Gold mesh can be attached
using a 2 mil round tracking
tool and a tool force of
approximately 22 grams and a
ultrasonic power of roughly 55
dB for a duration of 76 +/- 8
mS. The guided wedge at an
untrasonic power level of 64
dB can be used for 0.7 mil
wire. The recommended wire
bond stage temperature is 150
+/- 2C.
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly
temperature and time.
The chip is 100um thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface and
should be handled by the
edges or with a custom collet
(do not pick up the die with a
vacuum on die center).
This MMIC is also static
sensitive and ESD precautions
should be taken.
Notes:
[1] Ablebond 84-1 LM1 silver epoxy is
recommended.
[2] Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
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