|
|
PDF RF3166 Data sheet ( Hoja de datos )
| Número de pieza | RF3166 | |
| Descripción | POWER AMPLIFIER MODULE | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RF3166 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
0
Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
RF3166
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
• GSM850/EGSM900/DCS/PCS Products
• GPRS Class 12
• Power StarTM Module
Product Description
The RF3166 is a high-power, high-efficiency power ampli-
fier module with integrated power control that provides
over 50dB of control range. The device is a self-contained
6mmx6mm module with 50Ω input and output terminals.
The device is designed for use as the final RF amplifier in
GSM850, EGSM900, DCS and PCS handheld digital cel-
lular equipment and other applications in the 824MHz to
849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz
and 1850MHz to 1910MHz bands. The RF3166 incorpo-
rates RFMD’s latest VBATT tracking circuit, which monitors
battery voltage and prevents the power control loop from
reaching saturation. The VBATT tracking circuit eliminates
the need to monitor battery voltage, thereby miDniamtaizSinhgeet4U.com
switching transients. The RF3166 requires no external
routing or external components, simplifying layout and
reducing board space.
1.40
1 1.25
6.00
± 0.10
6.00 ± 0.10
Shaded areas represent pin 1.
5.823
5.500
5.400 TYP
5.225 TYP
5.200 TYP
4.625 TYP
4.450 TYP
3.850 TYP
3.675 TYP
3.075 TYP
2.900 TYP
2.300 TYP
2.125 TYP
1.525 TYP
1.350 TYP
0.800 TYP
0.600 TYP
0.500 TYP
0.000
0.450
± 0.075
Dimensions in mm.
1
5.900 TYP
5.435
5.370
5.035
4.600
4.300
4.200
3.800
3.400
3.065
3.000
2.600
2.100
1.700
1.365
1.300
0.900 TYP
0.750 TYP
0.565 TYP
0.100 TYP
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
9SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
Package Style: Module, 6mm x6mm
Features
• Ultra-Small 6mmx6mm Package Size
• Integrated VREG
• Complete Power Control Solution
DCS/PCS
RFIN
1
BAND SELECT 2
9
DCS/PCS
RFOUT
• Automatic VBATT Tracking Circuit
• No External Components or Routing
TX ENABLE 3
• Improved Power Flatness
VBATT 4
GND 5
VRAMP 6
GSM
RF IN
7
8
GSM
RFOUT
Functional Block Diagram
Ordering Information
RF3166
Quad-Band GSM850/GSM900/DCS/PCS
Power Amp Module
RF3166 SB
Power Amp Module 5-Piece Sample Pack
RF3166PCBA-410 Fully Assembled Evaluation Board
RF3166ASMPCBA-410 Fully Assembled Evaluation Board with
Antenna Switch Module
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Greensboro, NC 27409, USA
Fax (336) 664 0454
http://www.rfmd.com
DataSheet4U.com
DataShee
Rev A1 051107
2-491
DataSheet4 U .com
1 page  
www.DataSheet4U.com
RF3166
et4U.com
Parameter
Overall (DCS Mode)
Operating Frequency Range
Maximum Output Power 1
Maximum Output Power 2
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Forward Isolation 2
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability
Specification
Min.
Typ.
Max.
Unit
1710 to 1785
32.0
30.0
46 52
0 +3
-85
+5
-80
-40 -30
-25 -10
-15 -10
-30 -15
-36
50
2.5:1
8:1
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Output Load VSWR Ruggedness 10:1
DataSheet4U.com
Output Load Impedance
Power Control VRAMP
Power Control Range
Transient Spectrum
Transient Spectrum Under
Extreme Conditions
50 Ω
45 50
dB
-35 dBm
-23 dBm
Power Degradation from
Nominal Conditions
0dBm to 15dBm
15dBm to 30dBm
-4
-2
+4 dB
+2 dB
Notes:
VRAMP_RP=VRAMP set for 32dBm at nominal conditions.
Condition
Temp=25°C, VBATT=3.5V,
VRAMP=2.1V, PIN=3dBm,
Freq=1710MHz to 1785MHz,
25% Duty Cycle, pulse width=1154μs
Temp=+25°C, VBATT=3.5V, VRAMP=2.1V
Temp=+85°C, VBATT=3.0V, VRAMP=2.1V
At POUT MAX, VBATT=3.5V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 1805MHz to 1880MHz,
POUT < 32dBm
TXEnable=Low, PIN=+5dBm
TXEnable=High, VRAMP=0.26V,
PIN = +5 dBm
VRAMP=0.26V to VRAMP_RP
VRAMP=0.26V to VRAMP_RP
VRAMP=0.26V to 2.1V
Spurious<-36dBm, RBW=3MHz
Set VRAMP where POUT<32dBm into 50Ω
load
Set VRAMP where POUT<32dBm into 50Ω
load. No damage or permanent degradation
to part.
Load impedance presented at RF OUT pad
DataShee
VRAMP=0.26V to 2.1V
VRAMP= VRAMP_RP
Temp=-20°C to +85°C, VBATT>3.0V.
Ramping shape same as for Condition:
Temp=25°C, VBATT=3.5V,
VRAMP= VRAMP_RP
VBATT=3.0V to 4.5V, Temp=-20°C to +85°C,
PIN=0dBm to 5dBm,
Relative to output power for condition:
VBATT=3.5V, PIN=+3dBm, Temp=25°C,
Freq = 1747.5 MHz.
Output power variation measured at set
VRAMP.
DataSheet4U.com
Rev A1 051107
DataSheet4 U .com
2-495
5 Page 
www.DataSheet4U.com
RF3166
Theory of Operation
Overview
The RF3166 is a quad-band GSM850, EGSM900, DCS1800, and PCS1900 power amplifier module that incorporates an
indirect closed loop method of power control. This simplifies the phone design by eliminating the need for the compli-
cated control loop design. The indirect closed loop appears as an open loop to the user and can be driven directly from
the DAC output in the baseband circuit.
Theory of Operation
The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power con-
trol systems in GSM sense either forward power or collector/drain current. The RF3166 does not use a power detector. A
high-speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a con-
stant bias. The VRAMP signal is multiplied by a factor of 2.3 and the collector voltage for all three stages is regulated to
the multiplied VRAMP voltage. The basic circuit is shown in the following diagram.
VBATT
et4U.com
VRAMP
-
+
3 dB BW
300 kHz
-
+
H(s)
Saturation
Detector
DataSheet4U.com
RF IN
RF OUT
DataShee
TX ENABLE
By regulating the power, the stages are held in saturation across all power levels. As the required output power is
decreased from full power down to 0dBm, the collector voltage is also decreased. This regulation of output power is
demonstrated in Equation 1 where the relationship between collector voltage and output power is shown. Although load
impedance affects output power, supply fluctuations are the dominate mode of power variations. With the RF3166 regu-
lating collector voltage, the dominant mode of power fluctuations is eliminated.
PdBm
=
10 ⋅ log
-(--2----⋅---V----C----C----–-----V----S---A---T---)--2-
8 ⋅ RLOAD ⋅ 10–3
(Eq. 1)
There are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of
them are:
• Current draw and system efficiency
• Power variation due to Supply Voltage
• Power variation due to frequency
• Power variation due to temperature
• Input impedance variation
• Noise power
• Loop stability
• Loop bandwidth variations across power levels
• Burst timing and transient spectrum trade offs
• Harmonics
DataSheet4U.com
Rev A1 051107
DataSheet4 U .com
2-501
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet RF3166.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RF3160 | DUAL-BAND GSM/DCS POWER AMP MODULE | RF Micro Devices |
| RF3160PCBA | DUAL-BAND GSM/DCS POWER AMP MODULE | RF Micro Devices |
| RF3161 | QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE | RF Micro Devices |
| RF3163 | 3V 900MHZ LINEAR POWER AMPLIFIER MODULE | RF Micro Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |