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RD38F4050L0Z Schematic ( PDF Datasheet ) - Intel

Teilenummer RD38F4050L0Z
Beschreibung (RD38F4455LVY / RD38F4050L0Z) Wireless Memory System
Hersteller Intel
Logo Intel Logo 




Gesamt 54 Seiten
RD38F4050L0Z Datasheet, Funktion
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Intel StrataFlash£ Wireless Memory
System (LV18/LV30 SCSP)
768-Mbit LVQ Family with Asynchronous Static RAM
Datasheet
Product Features
Device Architecture
xRAM Performance
— Code and data segment: 128- and 256-
Mbit density; PSRAM: 32- and 64-Mbit
density; SRAM: 8 Mbit density.
— PSRAM at 1.8 V I/O : 85 ns initial
access, 30 ns async page reads; 65 ns
initial access, 18 ns async page.
— Top or bottom parameter configuration. — SRAM at 1.8 or 3.0 V I/O: 70 ns initial
— Asymmetrical blocking structure.
access.
— 16-KWord parameter blocks (Top or
Flash Performance
Bottom); 64-K Word main blocks.
— Code Segment at 1.8 V I/O: 85 ns initial
— Zero-latency block locking.
access; 25 ns async page read; 14 ns
— Absolute write protection with block
sync reads (tCHQV); 54 MHz CLK.
lock down using F-WP#.
— Data Segment at 1.8 V I/O: 170 ns initial
access; 55 ns async page read.
Device Voltage
— Core: VCC = 1.8 V (typ).
Flash Architecture
— Hardware Read-While-Write/Erase.
— I/O: VCCQ = 1.8 V or 3.0DVa(ttaySph).eet4U.com— 8-Mbit or 16-Mbit Multi-Partition.
Device Concurrent Operations (3 Dies)
— Buffered EFP: 600 KB per second.
— 2-Kbit One-Time Programmable (OTP)
Protection Register.
— Erase Performance: 384 KB per second
(main blocks).
— Software Read-While-Write/Erase.
Device Packaging
— Single Full-Die Partition size.
— 88 balls (8 x 10 active ball matrix).
— Area: 8 x 10 mm or 8 x 11 mm.
Flash Software
— Intel£ FDI, Intel£ PSM, and Intel£
VFM.
— Height: 1.0 mm to 1.4 mm.
— Common Flash Interface (CFI).
Quality and Reliability
— Extended Temp: 25 °C to +85 °C.
— Basic/Extended Command Set.
— Minimum 100 K flash block erase cycle.
The Intel StrataFlash® Wireless Memory System (LV18/LV30 SCSP); 768-Mbit LVQ Family
with Asynchronous Static RAM device offers a high performance code and large embedded data
segment plus RAM combination in a common package with electrical QUAD+ ballout on 0.13
µm ETOX™ VIII flash technology. The code segment flash die features 1.8 V low-power
operations with flexible, multi-partition, dual operation Read-While-Write / Read-While-Erase,
asynchronous and synchronous burst reads at 54 MHz. The data segment flash die features 1.8 V
low-power operations optimized for cost sensitive asynchronous data applications. This device
integrates up to three flash dies, two PSRAM dies, and one SRAM die in a low-profile package
compatible with other SCSP families using the QUAD+ ballout package.
Notice: This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
253852-002
December 2003
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RD38F4050L0Z Datasheet, Funktion
www.DataSheet4U.com
768-Mbit LVQ Family with Asynchronous Static RAM
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Non-Array Reads
Flash reads which return flash Device Identifier, CFI Query, Protection
Register and Status Register information
Program
An operation to Write data to the flash array
Write
Bus cycle operation at the inputs of the flash die, in which a command
or data are sent to the flash array
Block
Group of cells, bits, bytes or words within the flash memory array that
get erased with one erase instruction
Parameter block
Any 16-Kword flash array block.
Main block
Any 64-Kword flash array block.
Top parameter
Previously referred to as a top-boot device, a device with flash
parameter partition located at the highest physical address of its
memory map for processor system boot up.
Bottom parameter
Previously referred to as a bottom-boot device, a device with flash
parameter partition located at the lowest physical address of its memory
map for processor system boot up.
Bottom-Top parameter Stacked-CSP device configuration of two flash dies in the same
segment arranged with the parameter partitions located at the lowest
and highest physical address of its memory map.
Partition
Parameter partition
A groDuaptoafSfhlaeseht4blUo.cckosmthat shares common status register read state.
A flash partition containing parameter and main blocks.
Main partition
A flash partition containing only main blocks.
Die Individual physical flash die used in a stacked-CSP memory subsystem
device
Segment
A section of the SCSP memory subsystem divided for different
operating characteristics. The SCSP memory subsystem has three
segments: a code segment, a data segment, and an xRAM segment.
Code segment
A segment that contains one or two flash memory dies optimized for
fast code or data reads. Each die features multi-partition synchronous
read-while-write or burst read-while-erase capability.
Data segment
A segment contains one or two flash memory dies optimized for large
embedded data. Each die feature single-partition asynchronous read,
write, and erase operations.
xRAM segment
A segment contains one or two xRAM memory dies. The xRAM
combinations could include SRAM, PSRAM, or LPSDRAM.
Subsystem
A stacked memory integration concept made up of multiple memory
dies arranged in Code, Data, and xRAM segments.
Device
An individual flash die or a flash + xRAM SCSP.
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RD38F4050L0Z pdf, datenblatt
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768-Mbit LVQ Family with Asynchronous Static RAM
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3.2 Four-Die SCSP
Figure 3. Mechanical Specifications for Four-Die SCSP (11x13 mm)
A1 Index
Mark
12 34 56 7 8
A
B
C
D
E
F
G
H
J
K
L
M
E
A
B
C
D
E
F
D
G
H
J
K
L
M
S1
8 7 6 5 4 3 21
S2
e
b
Top View - Ball Down
Bottom View - Ball Up
A2 DataSheet4U.com
A1 A
Y
Drawing not to scale.
Dimens ions
Package Height
Ball Height
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along E
Corner to Ball A1 Distance Along D
Symbol
A
A1
A2
b
D
E
e
N
Y
S1
S2
Min
0.200
0.325
12.900
10.900
2.600
2.000
Millimeters
Nom Max
1.400
1.070
0.375
13.000
11.000
0.800
88
2.700
2.100
0.425
13.100
11.100
0.100
2.800
2.200
Notes
Min
0.0079
0.0128
0.5079
0.4291
0.1024
0.0787
Inches
Nom
0.0421
0.0148
0.5118
0.4331
0.0315
88
0.1063
0.0827
Max
0.0551
0.0167
0.5157
0.4370
0.0039
0.1102
0.0866
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