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PDF D1266A Data sheet ( Hoja de datos )
| Número de pieza | D1266A | |
| Descripción | NPN Transistor - 2SD1266A | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
www.DataSheCeto4lUle.cctoorm-base voltage
(Emitter open)
2SD1266 VCBO
2SD1266A
60
80
Collector-emitter voltage 2SD1266 VCEO
(Base open)
2SD1266A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VEBO
IC
ICP
PC
6
3
5
35
2.0
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1266 VCEO IC = 30 mA, IB = 0 60 V
(Base open)
2SD1266A
80
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
2SD1266
2SD1266A
VBE
ICES
Collector-emitter cutoff
current (Base open)
2SD1266 ICEO
2SD1266A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 3 A
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA
VCC = 50 V
1.8 V
200 µA
200
300 µA
300
1 mA
70 320
10
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250 160 to 320
Publication date: April 2003
SJD00283BED
1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1266A.PDF ] | |
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