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PDF PHMB1200B12 Data sheet ( Hoja de datos )
| Número de pieza | PHMB1200B12 | |
| Descripción | IGBT MODULE | |
| Fabricantes | Nihon Inter Electronics | |
| Logotipo |  |
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TENTATIVE
IGBT MODULE Single 1200A 1200V
CIRCUIT
PHMB1200B12
OUTLINE DRAWING
4-fasten-tabNo 110
Dimension(mm)
Approximate Weight : 1,200g
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PHMB1200B12
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heat sink
Mounting Torque Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
M4
M8
1200
+/ - 20
1200
2400
5600
-40 to +150
-40 to +125
2500
3
1.4
10.5
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min. Typ.
Collector-Emitter Cut-Off Current
ICES VCE=1200V,VGE=0V
--
Gate-Emitter Leakage Current
IGES VGE=+/- 20V,VCE=0V
--
Collector-Emitter Saturation Voltage
VCE(sat) IC=1200A,VGE=15V
- 1.9
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=400mA
4.0 -
Input Capacitance
Cies VCE=10V,VGE=0V,f=1MHz
- 100000
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 600V
ton RL= 0.5 ohm
tf RG= 0.33 ohm
toff VGE= +/- 15V
- 0.25
- 0.40
- 0.25
- 1.00
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
1200
2400
Max.
24
1.0
2.4
8.0
-
0.45
0.70
0.35
1.50
Unit
V
V
A
W
°C
°C
V
N•m
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=1200A,VGE=0V
IF=1200A,VGE=-10V,di/dt=2400A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
-
Min.
-
-
Typ. Max. Unit
1.9 2.4 V
0.4 0.5 µs
Typ. Max. Unit
-
-
0.022
0.043
°C/W
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