DataSheet.es    


PDF PHM8001 Data sheet ( Hoja de datos )

Número de pieza PHM8001
Descripción MOSFET MODULE Single 900A/150A
Fabricantes Nihon Inter Electronics 
Logotipo Nihon Inter Electronics Logotipo



Hay una vista previa y un enlace de descarga de PHM8001 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! PHM8001 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
MOSFET MODULE Single 800A /150V
PHM8001
OUTLINE DRAWING
FEATURES
* Trench Gate MOS FET Module
* Super Low Rds(ON) 1.4 milliohms( @800A )
* With Fast Recovery Source-Drain Diode
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
Circuit
MAXMUM RATINGS
Approximate Weight : 650g
Ratings
Symbol
PHM8001
Drain-Source Voltage (VGS=0V)
Gate - Source Voltage
Continuous Drain Current
Duty=50%
D.C.
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
VDSS
VGSS
ID
IDM
PD
Tjw
Tstg
VISO
150
+/ - 20
800 (Tc=25°C)
640 (Tc=25°C)
1,600 Tc=25°C)
2,650 Tc=25°C)
-40 to +150
-40 to +125
2,500
3.0
Mounting Torque
Gate Terminals
Bus Bar to Main Terminals
FTOR
M4
M8
1.4
10.5
Unit
V
V
A
A
W
°C
°C
V
Nm
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
IDSS VDS=VDSS,VGS=0V
IGSS VGS=+/- 20V,VDS=0V
Gate-Source Threshold Voltage
VGS(th) VDS=VGS, ID=16mA
Static Drain-Source On-Resistance
rDS(on) VGS=10V, ID=800A
Drain-Source On-Voltage
VDS(on) VGS=10V, ID=800A
Forward Transconductance
gfs VDS=15V, ID=800A
Input Capacitance
Cies
Output Capacitance
Coss VDS=10V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
tr VDD= 80V
td(on) ID=400A
tf VGS= -5V, +10V
td(off) RG= 0.75 ohm
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Continuous Source Current
IS
Duty=50%.
D.C. (Terminal Temperature=80°C
Pulsed Source Current
ISM
-
Diode Forward Voltage
VSD IS=800A
Reverse Recovery Time
trr IS=800A, -dis/dt=1,600A/µs
Min.
-
-
1.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.0
1.15
1.10
-
165
20
20
500
880
180
1,300
Max.
4.8
4.8
3.2
1.4
1.25
-
-
-
-
-
-
-
-
Unit
mA
µA
V
m-ohm
V
S
nF
nF
nF
ns
Min.
-
-
-
-
Typ.
-
-
1.10
130
Max.
800
650
1,600
1.76
-
Unit
A
A
V
ns
THERMAL CHRACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Symbol
Rth(j-c)
Rth(c-f)
Test Condition
Mounting surface flat, smooth, and greased
Min.
-
-
Typ.
-
-
Max.
0.047
0.035
Unit
°C/W
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet PHM8001.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PHM8001MOSFET MODULE Single 900A/150ANihon Inter Electronics
Nihon Inter Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar