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PDF D1N4148 Data sheet ( Hoja de datos )
| Número de pieza | D1N4148 | |
| Descripción | CD1N4148 | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CD1N4148
DO-35, 500mW
MARKING: Cathode band
+
4148
( no body coat)
General purpose applications. Hermetically sealed glass and the glass passivated chip Provides
excellent stability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified)
DESCRIPTION
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
VRRM
80 V
Reverse Voltage (Continuous)
VR
75 V
Average Forward Current
IF(AV)
150 mA
Forward Current (DC)
IF
200 mA
Repetitive Peak Forward Current
IFRM
450 mA
Non Repetitive Peak Surge Current tp=1usec IFSM
2000
mA
tp=1sec
IFSM
500 mA
Power Dissipation
PTA
500
Derating Factor
www.DataSheet4U.comOperating & Storage Junction Temperature
Tj, Tstg
2.85
-65 to +200
mW
mW/deg C
deg C
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
Forward Voltage
Reverse Current
Reverse Breakdown Voltage
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
VF
IR
VBR
Cd
Vfr
trr
IF=10mA
VR=20V
VR=75V
IR=100uA
IR=20uA
VR=0V, f=1MHz
IF=50mA, tr=20ns
IF=10mA, to IR=60mA
RL=100ohms
Measured @ IR=1mA
- - 1.0
- - 500
- - 20
80 - -
75 - -
- - 4.0
- - 2.5
- - 4.0
V
nA
uA
V
V
pF
V
ns
Continental Device India Limited
Data Sheet
Page 1 of 3
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| PDF Descargar | [ Datasheet D1N4148.PDF ] | |
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