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PDF GT8G132 Data sheet ( Hoja de datos )
| Número de pieza | GT8G132 | |
| Descripción | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
GT8G132
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC IC
8
A
1 ms
ICP
150
Collector power dissipation
www.DataSheet4U.comJunction temperature
(Note 1)
PC
Tj
1.1 W
150 °C
JEDEC
JEITA
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
―
―
2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17
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1 page  
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Switching Time – RG
10
toff
1
0.1
1
tf ton
tr Common emitter
VCE = 300 V
VGE = 4 V
IC = 150 A
Tc = 25°C
10 100
Gate resistance RG (Ω)
1000
GT8G132
VCE, VGE – QG
500 10
400 8
300 6
200 VGE
4
Common emitter
100
VCC = 300 V
2
VCE
RL = 2.0 Ω
Tc = 25°C
00
0 20 40 60 80
Gate charge QG (nC)
Switching Time – ICP
10
Maximum Operating Area
800
toff 600
tf
1 wton ww.DataShe40e0 t4U.com
0.1
0
Common emitter
tr VCC = 300 V
VGE = 4 V
RG = 51 Ω
Tc = 25°C
50 100 150 200
Collector current IC (A)
VCM = 350 V
200 Tc <= 70°C
VGE = 4.0 V
10 Ω <= RG <= 300 Ω
0
0 40
80
120 160
Peak collector current ICP (A)
200
200
160
120
80
40
0
0
Minimum Gate Drive Area
Tc = 25°C
70
246
Gate-emitter voltage VGE (V)
8
5
2002-05-17
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT8G132.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| GT8G131 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
| GT8G132 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
| GT8G133 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
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