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PDF PMEM4010PD Data sheet ( Hoja de datos )
| Número de pieza | PMEM4010PD | |
| Descripción | PNP transistor/Schottky diode module | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4010PD
PNP transistor/Schottky diode
module
Product specification
2002 Oct 28
www.DataSheet4U.com
1 page  
www.DataSheet4U.com
Philips Semiconductors
PNP transistor/Schottky diode module
Product specification
PMEM4010PD
1200
handbook, halfpage
hFE
1000
800
(1)
MHC088
600
(2)
400
(3)
200
0
−10−1
−1
−10
PNP transistor; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−102
−103
−104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
−10
handbook, halfpage
VBE
(V)
MHC089
−1
(1)
(2)
(3)
−10−−110−1
−1
−10
PNP transistor; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−102
−103
−104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
MHC090
handbook1, 0h2alfpage
RCEsat
(Ω)
10
MHC091
(1)
−10
(2)
(3)
−1
−1
−10 −102
PNP transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−103
−104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
www.DfauntcatSionhoefecot4lleUct.ocrocumrrent; typical values.
1
10−−110−1
−1
−10
PNP transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1)
(2)
(3)
−102
−103
−104
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2002 Oct 28
5
5 Page 
www.DataSheet4U.com
Philips Semiconductors
PNP transistor/Schottky diode module
NOTES
Product specification
PMEM4010PD
www.DataSheet4U.com
2002 Oct 28
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PMEM4010PD.PDF ] | |
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