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RD38F2240 Schematic ( PDF Datasheet ) - Intel

Teilenummer RD38F2240
Beschreibung (RD38F2xxx) FLASH+PSRAM
Hersteller Intel
Logo Intel Logo 




Gesamt 30 Seiten
RD38F2240 Datasheet, Funktion
Intel® Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Product Features
Datasheet
Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 8-, 16-, 32-
Mbit; Async SRAM Density: 4-, 8-, 16-
Mbit
— Top, Bottom or Dual flash parameter
configuration
Device Voltage
— Flash VCC = 1.8 V; Flash VCCQ = 1.8 V
or 3.0 V
— RAM VCC = 3.0 V; RAM VCCQ = 1.8 V
or 3.0 V
Device Packaging
— 88 balls (8 x 10 active ball matrix);
Area: 8x10 mm; Height: 1.2 mm to 1.4
mm
PSRAM Performance
— 70 ns initial access, 25 ns async page
reads at 1.8 V I/O
— 70 ns initial access async PSRAM at
1.8V I/O
— 88 ns initial access, 30 ns async page
reads at 1.8 V I/O
— 85 ns initial access, 35 ns async page
reads at 3.0 V I/O
— 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
— 70 ns initial access at 1.8 V or 3.0 V I/O
Flash Performance
— 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (tCHQV) at 1.8 V I/O
— 20 ns sync reads (tCHQV) at 3.0 V I/O
— Enhanced Factory Programming:
3.10 µs/Word (Typ)
Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or
Bottom); 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable (OTP)
Protection Register
— Zero-latency block locking
— Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
— Intel® Flash Data Integrator (FDI) and
Common Flash Interface (CFI)
Quality and Reliability
— Extended Temperature: –25 °C to +85 °C
— Minimum 100K flash block erase cycle
— 90 nm ETOX™ IX flash technology
— 130 nm ETOX™ VIII flash technology
The Intel® Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static
RAM combinations in a common package footprint. The flash memory features 1.8 V low-
power operations with flexible, multi-partition, dual-operation Read-While-Write / Read-While-
Erase, asynchronous, and synchronous reads. This SCSP device integrates up to two flash die,
one PSRAM die, and one SRAM die in a low-profile package compatible with other SCSP
families with QUAD+ ballout.
www.DataSheet4U.com
www.DataSheet4U.com
Order Number: 251407, Revisiownw:w0.1D0ataSheet4U.com
18-Oct-2005






RD38F2240 Datasheet, Funktion
Intel® Wireless Flash Memory (W18/W30 SCSP)
1.0
1.1
1.2
Introduction
This document contains information pertaining to the products in the Intel® Wireless Flash
Memory (W18/W30 SCSP) family with asynchronous RAM. The W18/W30 SCSP 32WQ and
64WQ families offer a wide variety of stacked combinations that include single flash die, two flash
die, flash + PSRAM, and flash + SRAM options.This document provides information where this
SCSP family differs from the Intel® Wireless Flash Memory (W18/W30) discrete device.
Refer to the discrete datasheets Intel® Wireless Flash Memory (W18) Datasheet (order number
290701) and Intel® Wireless Flash Memory (W30) Datasheet (order number 290702) for flash
product details not included in this SCSP datasheet.
Nomenclature
0x
0b
Byte
CFI
CUI
DU
ETOX
FDI
k (noun)
Kb
KB
Kword
M (noun)
Mb
MB
OTP
PLR
PR
PRD
RCR
RFU
SCSP
SR
SRD
Word
WSM
Hexadecimal prefix
Binary prefix
8 bits
Common Flash Interface
Command User Interface
Don’t Use
EPROM Tunnel Oxide
Flash Data Integrator (Intel® software solution)
1 thousand
1024 bits
1024 bytes
1024 words
1 million
1,048,576 bits
1,048,576 bytes
One-Time Programmable
Protection Lock Register
Protection Register
Protection Register Data
Read Configuration Register
Reserved for Future Use
Stacked Chip Scale Package
Status Register
Status Register Data
16 bits
Write State Machine
Conventions
Group Membership Brackets: Square brackets are used to designate group membership or to
define a group of signals with a similar function, such as A[21:1] and SR[4,1].
VCC vs. VCC: When referring to a signal or package-connection name, the notation used is VCC,
etc. When referring to a timing or electrical level, the notation used is subscripted such as
VCC, etc.
18-Oct-2005
6
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
Datasheet

6 Page









RD38F2240 pdf, datenblatt
Intel® Wireless Flash Memory (W18/W30 SCSP)
Figure 3. Mechanical Specifications for Triple-Die SCSP Device (8x10x1.4 mm)
A1
In d e x
Mark
A
B
C
D
E
F
G
H
J
K
L
M
1 234 567 8
E
A
B
C
D
E
DF
G
H
J
K
L
M
S1
8 7 6 5 4 3 21
S2
e
b
Top View - Ball Down
A2
A1
Bottom View - Ball Up
A
Dimens ions
Package Height
Ball Height
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along E
Corner to Ball A1 Distance Along D
Y
Drawing not to scale.
Symbol
A
A1
A2
b
D
E
e
N
Y
S1
S2
Min
0.200
0.325
9.900
7.900
1.100
0.500
Millimeters
Nom Max Notes
1.400
1.070
0.375
10.000
8.000
0.800
88
1.200
0.600
0.425
10.100
8.100
0.100
1.300
0.700
Min
0.0079
0.0128
0.3898
0.3110
0.0433
0.0197
Inches
Nom
0.0421
0.0148
0.3937
0.3150
0.0315
88
0.0472
0.0236
Max
0.0551
0.0167
0.3976
0.3189
0.0039
0.0512
0.0276
18-Oct-2005
12
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
Datasheet

12 Page





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