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PDF GMM2649233EFTG Data sheet ( Hoja de datos )
| Número de pieza | GMM2649233EFTG | |
| Descripción | 8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl | |
| Fabricantes | Hynix Semiconductor | |
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8Mx64 bits
PC100/PC133 SDRAM Unbuffered DIMM
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
GMM2649233EFTG
Description
The GMM2649233EFTG is a 8M x 64bits
Synchronous Dynamic RAM MODULE
which is assembled 8 pieces of 8M x 8bits
Synchronous DRAMs in 54 pin TSOP II
package and one 2048 bit EEPROM in 8pin
TSSOP package mounted on a 168 pin
printed circuit board with decoupling
capacitors. The GMM2649233EFTG is
optimized for application to the systems which
are required high density and large capacity
such as main memory of the computers and an
image memory systems, and to the others
which are requested compact size.
The GMM2649233EFTG provides common
data inputs and outputs.
GMM2649233EFTG Single side
Features
* PC133/PC100/PC66 Compatible
-7(143MHz)/-75(133MHz)/-8(125MHz)
-7K(PC100,2-2-2)/7J(PC100,3-2-2)
* 3.3V +/- 0.3V Power supply
* Maximum Clock frequency
100/125/133/143 MHz
* LVTTL Interface
* Burst read/write operation and burst read/
single write operation capability
* Programmable burst length ;
1, 2, 4, 8, Full page
* Programmable burst sequence
Sequential / Interleave
* Full Page burst length capability
Sequential burst
Burst stop capability
* Programmable CAS Latency ; 2, 3
* CKE power down mode
* Input / Output data masking
* 4096 Refresh Cycles / 64ms
* Auto refresh / Self refresh Capability
* Serial Presence Detect with EEPROM
Pin Name
CK0, 1, 2, 3
CKE0
S0, 2
RAS
CAS
WE
A0 ~ A11
BA0,1
DQ0 ~ 63
DQMB0 ~ 7
VCC
VSS
NC
VREF
SDA
SCL
SA0 ~ 2
DU
Clock input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address input
Bank Address input
Data input / output
Data input / output Mask
Power for internal circuit
Ground for internal circuit
No Connect
Power Supply for Reference
Serial Data input/ output
Serial Clock
Address in EEPROM
Don't Use
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
-1-
Rev. 1.1/Apr.01
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
1 page  
Absolute Maximum Ratings
Parameter
Symbol
Voltage on any pin relative to VSS
VT
Supply voltage relative to VSS
VCC
Short circuit output current
IOUT
Power dissipation
PT
Operating temperature
Topr
Storage temperature
Tstg
Notes : 1. Respect to VSS
GMM2649233EFTG
Value
-0.5 to Vcc+0.5
( 4.6 (max))
-0.5 to +4.6
50
1.0
0 to +70
-55 to +125
Unit
V
V
mA
W
Note
1
1
Recommended DC Operating Conditions (Ta = 0 to + 70 )
Parameter
Supply voltage
Input high voltage
Input low voltage
Symbol Min Max Unit
VCC, VCCQ
3.0
3.6
V
VSS, VSSQ
0
0V
VIH
2.0 Vcc+0.3
V
VIL -0.3 0.8 V
Notes : 1. All voltage referred to VSS.
2. VIH (max) = 5.6V for pulse width
3. VIL (min) = -2.0V for pulse width
3ns
3ns
Note
1
1, 2
1,3
Rev. 1.1/Apr.01
-5-
5 Page 
GMM2649233EFTG
Relationship Between Frequency and Minimum Latency
Parameter
frequency(MHz)
tCK (ns)
Burst stop to
output valid
data hold
Burst stop to
output high
impedance
(CL=2)
(CL=3)
(CL=2)
(CL=3)
Burst stop to write data ignore
-7 -75 - 8 - 7K - 7J
Symbol 143 100 133 100 125 100 100 100 100 66 Notes
7 10 7.5 10 8 10 10 10 10 15
lBSR - 1 - 1 - 1 1 1 - 1
lBSR 2 2 2 2 2 2 2 2 2 2
lBSH - 2 - 2 - 2 2 2 - 2
lBSH 3 3 3 3 3 3 3 3 3 3
lBSW 0 0 0 0 0 0 0 0 0 0
Rev. 1.1/Apr.01
-11-
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GMM2649233EFTG.PDF ] | |
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