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GMF05C Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GMF05C
Beschreibung ESD Protection Diode Array
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 2 Seiten
GMF05C Datasheet, Funktion
0.087 (2.20)
0.071 (1.80)
SOT-363
Top View
New Product
TVS Diode Array
For ESD & Latch-Up Protection
GMF05C
Vishay Semiconductors
formerly General Semiconductor
Pin Configuration (Top View)
654
0.087 (2.20)
0.079 (2.00)
0.053 (1.35)
123
0.045 (1.15)
m0.012 (0.30)
0.009 (0.20)
.co0.026 (0.65)
0.052 (1.3)
Dimensions in inches
and (millimeters)
U0.004 (0.10)
0.039 (1.00)
0.031 (0.80)
0.01 (0.25)
0.004 (0.10)
t410¡ Typical
eMechanical Data
eCase: SOT-363 package
Molding Compound Flammability Rating: UL 94V-0
hTerminals: High temperature soldering guaranteed:
250°C/10 sec. at terminals
SMarking Code: GF5
Packaging Codes - Options:
taG1 - 10K per 13” reel, 30K/box
G2 - 3K per 7” reel, 30K/box
Mounting Pad Layout
0.063 (1.60)
0.052 (1.30)
Ref.
0.026 (0.65)
Ref.
0.014 (0.35)
Features
0.035
(0.90)
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 1000-4-5 (Lightning) 12A (tp = 8/20µs)
• Small package for use in portable electronics
• Bidirectional protection of 4 I/O lines
• Unidirectional protection of 5 I/O lines
• Low leakage current • Low operating and clamping voltages
• Ideal for cellular handsets, cordless phones, notebooks
and handhelds, and digital cameras
aMaximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
.DParameter
Symbol
Value
Peak Pulse Power 8/20µs waveform
Pppm
200
Peak Pulse Current 8/20µs waveform
IPP 12
wOperating Temperature
TJ –55 to +125
wStorage Temperature
TSTG
–55 to +150
Unit
W
A
°C
°C
w omElectrical Characteristics (TA = 25°C unless otherwise noted)
.cParameter
Symbol
UReverse Stand-Off Voltage
VRWM
t4Reverse Breakdown Voltage at It = 1mA
VBR
eeReverse Leakage Current at VRWM = 5V
IR
hClamping Voltage at IPP = 1A, 8/20µs waveform
Sat IPP = 12A, 8/20µs waveform
VC
taPeak Forward Voltage at IF = 1A, 8/20µs waveform
VF
aJunction Capacitance between I/O pins and Gnd
.DVR = 0V, f = 1MHZ
Cj
Minimum
6
Typical
1.5
Maximum
5
10
9.5
12.5
150
Unit
V
V
µA
V
V
pF
wwDocument Number 88338
w20-May-02
www.vishay.com
1





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