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DM0265R Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer DM0265R
Beschreibung FSDM0265R
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 20 Seiten
DM0265R Datasheet, Funktion
www.DataSheet4U.com
www.fairchildsemi.com
FSDL0165RN
Green Mode Fairchild Power Switch (FPSTM)
Features
• Internal Avalanche Rugged Sense FET
• Consumes only 0.65W at 240VAC & 0.3W load with
Advanced Burst-Mode Operation
• Frequency Modulation for low EMI
• Precision Fixed Operating Frequency
• Internal Start-up Circuit
• Pulse by Pulse Current Limiting
• Abnormal Over Current Protection
• Over Voltage Protection
• Over Load Protection
• Internal Thermal Shutdown Function
• Auto-Restart Mode
• Under Voltage Lockout
• Low Operating Current (3mA)
• Adjustable Peak Current Limit
• Built-in Soft Start
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The FSDL0165RN is an integrated Pulse Width Modulator
(PWM) and Sense FET specifically designed for high perfor-
mance offline Switch Mode Power Supplies (SMPS) with
minimal external components. This device is an integrated
high voltage power switching regulator which combine an
avalanche rugged Sense FET with a current mode PWM
control block. The integrated PWM controller features
include: a fixed oscillator with frequency modulation for
reduced EMI, Under Voltage Lock Out (UVLO) protection,
Leading Edge Blanking (LEB), optimized gate turn-on/turn-
off driver, Thermal Shut Down (TSD) protection, Abnormal
Over Current Protection (AOCP) and temperature compen-
sated precision current sources for loop compensation and
fault protection circuitry. When compared to a discrete
MOSFET and controller or RCC switching converter solu-
tion, the FSDL0165RN reduce total component count,
design size, weight and at the same time increases efficiency,
productivity, and system reliability. This device is a basic
platform well suited for cost effective designs of flyback
converters.
OUTPUT POWER TABLE
230VAC ±15%(3)
85-265VAC
PRODUCT
Adapt- Open Adapt- Open
er(1) Frame(2) er(1) Frame(2)
FSDL321
11W
17W
8W
12W
FSDH321
11W
17W
8W
12W
FSDL0165RN 13W
23W
11W
17W
FSDM0265RN 16W
27W
13W
20W
FSDH0265RN 16W
27W
13W
20W
FSDL0365RN 19W
30W
16W
24W
FSDM0365RN 19W
30W
16W
24W
FSDL0165RL 13W
23W
11W
17W
FSDM0265RL 16W
27W
13W
20W
FSDH0265RL 16W
27W
13W
20W
FSDL0365RL 19W
30W
16W
24W
FSDM0365RL 19W
30W
16W
24W
Table 1. Notes: 1. Typical continuous power in a non-ven-
tilated enclosed adapter measured at 50°C ambient. 2.
Maximum practical continuous power in an open frame
design at 50°C ambient. 3. 230 VAC or 100/115 VAC with
doubler.
Typical Circuit
AC
IN
Vstr Drain
Ipk
PWM
Vfb Vcc Source
DC
OUT
Figure 1. Typical Flyback Application
©2004 Fairchild Semiconductor Corporation
Rev.1.0.4






DM0265R Datasheet, Funktion
www.DataSheet4U.com
FSDL0165RN
Shutdown Feedback Voltage
Over Voltage Protection
Shutdown Feedback Delay Current
Leading Edge Blanking Time
TOTAL DEVICE SECTION
Operating Current
Start Up Current
Vstr Supply Voltage
VSD
VOVP
IDELAY
TLEB
VFB=4V
IOP
ISTART
VSTR
VCC=14V
VCC=0V
VCC=0V
Note:
1. Pulse test: Pulse width 300uS, duty 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
5.5 6.0 6.5 V
18 19
-
V
3.5 5.0 6.5 µA
200 -
- ns
135
0.7 0.85 1.0
35 -
-
mA
mA
V
6

6 Page









DM0265R pdf, datenblatt
www.DataSheet4U.com
FSDL0165RN
5V D R A IN
S W IT C H
OFF
I_ o ve r
GND
Rsense
Figure 8. Soft Start Function
6. Burst operation :In order to minimize power dissipation in
standby mode, the FPSTM enters burst mode operation.
FB
3
+
0.3/0.5V
0.5V
-
Vcc
Vcc
Idelay
Vcc
IB_PEAK
IFB
Normal
2.5R
R
Burst
PWM
MOSFET
Current
Figure 9. Circuit for Burst operation
Burst Operation
Feedback
Burst Operation
Normal Operation
0.5V
0.3V
Current
waveform
Switching OFF
Switching OFF
Figure 10. Circuit for Burst Operation
7. Frequency Modulation : EMI reduction can be accom-
plished by modulating the switching frequency of a switched
power supply. Frequency modulation can reduce EMI by
spreading the energy over a wider frequency range than the
band width measured by the EMI test equipment. The
amount of EMI reduction is directly related to the depth of
the reference frequency. As can be seen in Figure 11, the fre-
quency changes from 65KHz to 69KHz in 4mS for the
FSDM0265RN. Frequency modulation allows the use of a
cost effective inductor instead of an AC input mode choke to
satisfy the requirements of world wide EMI limits.
Internal
O scilla to r
69kHz
As the load decreases, the feedback voltage decreases. As shown in
figure 10, the device automatically enters burst mode when the
feedback voltage drops below VBURH(500mV). Switching still con-
tinues but the current limit is set to a fixed limit internally to mini-
mize flux density in the transformer. The fixed current limit is
larger than that defined by Vfb = VBURH and therefore, Vfb is
driven down further. Switching continues until the feedback
voltage drops below VBURL(300mV). At this point switching
stops and the output voltages start to drop at a rate dependent
on the standby current load. This causes the feedback volt-
age to rise. Once it passes VBURH(500mV) switching resumes.
The feedback voltage then falls and the process repeats. Burst
mode operation alternately enables and disables switching of
the power Sense FET thereby reducing switching loss in
Standby mode.
Drain to
Source
voltage
Drain to
Source
current
Vds
W aveform
65kHz
67kHz
69kHz
4kHz
Turn-on
Turn-off
point
Figure 11. Frequency Modulation Waveform
12

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