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Teilenummer | PF0031 |
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Beschreibung | MOS FET Power Amplifier Module | |
Hersteller | Hitachi | |
Logo | ||
Gesamt 13 Seiten heet4U.com PF0031MOS FET Power Amplifier Module for Mobile Phone
www.DataS mApplication
.coPF0031: For NMT900 890 to 925 MHz
Features
U• High stability: Load VSWR ≈ 20:1
t4• Low power control current: 400 µA
• Thin package: 5 mm t
eePin Arrangement
h• RF-B2
ataS2
www.D www.DataSheet4U.com5 1
ADE-208-461 (Z)
1st Edition
July 1, 1996
5
4
3
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
PF0031
Characteristics Curve
Pout, ηT vs. VDD (1)
20
f = 890 MHz
Pin = 2 mW
16
VAPC = 4 V
Tc = 25 °C
ηT
12
60
50
40
8 30
Pout
4 20
0
0 4 8 12 16
Supply Voltage VDD (V)
Pout, ηT vs. VDD (2)
20
f = 915 MHz
Pin = 2 mW
16
VAPC = 4 V
Tc = 25°C
10
20
60
50
12 40
ηT
8 30
Pout
4 20
0 10
0 4 8 12 16 20
Supply Voltage VDD (V)
6
6 Page PF0031
Package Dimensions
Unit: mm
60.5 ± 0.5
57.5 ± 0.5
R1.6
12
0.5
34
49.8 ± 0.5
13.0 ± 1
22.0 ± 1
9.2 ± 1
8.0 ± 1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
RF-B2
—
—
16 g
12
12 Page | ||
Seiten | Gesamt 13 Seiten | |
PDF Download | [ PF0031 Schematic.PDF ] |
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