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CGB240B Schematic ( PDF Datasheet ) - TriQuint Semiconductor

Teilenummer CGB240B
Beschreibung 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Hersteller TriQuint Semiconductor
Logo TriQuint Semiconductor Logo 




Gesamt 19 Seiten
CGB240B Datasheet, Funktion
CGB 240B
Datasheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB240B GaAs power amplifier MMIC has been
especially developed for wireless LAN applications in the
2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b
standards. The chip is also fully compliant with Bluetooth
class 1 applications and thus can be used in dual-mode
(Bluetooth/WLAN) applications, too.
While providing an effective channel power of 22dBm, the
ACPR is better than -33dB relative to the sinx/x spectral
peak of an IEEE802.11b–modulated TX signal. Each
CGB240B chip is individually tested for IP3, resulting in
guaranteed ACPR performance.
In a Bluetooth class 1 system, the CGB240B’s high power
added efficiency (up to 50%) and single positive supply
operation makes the device ideally suited for handheld
applications. The CGB240B delivers 23 dBm output power
at a supply voltage of 3.2 V, with an overall PAE of 50% in
saturated mode. The output power can be adjusted using
an analog control voltage (VCTR). Simple external input-,
interstage-, and output matching circuits are used to adapt
to the different requirements of linearity and harmonic
suppression in various applications2-stage InGaP HBT
power amplifier for WLAN and Bluetooth applications.
Features:
Pout = +23dBm at 3.2 V
ACPR / IP3 tested to be compliant with IEEE802.11b
standard
Fully compliant with Bluetooth requirements (dual-mode
use)
Single voltage supply
Wide operating voltage range 2.0 - 5.5 V
Analog power control with four power steps
Easy external matching concept
Applications:
WLAN
IEEE 802.11a
Bluetooth Class 1
Package Outline:
1
5
P-TSSOP-10-2
Pin configuration:
1 & 2:
Vc1
3: RFin
4, 5, & 10:
NC
6: Vcntrl1
7: Vcntro2
8 & 9:
Vc2
11 (paddle) GND
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 1/20






CGB240B Datasheet, Funktion
CGB240B Datasheet
Operational Impedances for Bluetooth Application
TA = 25 °C; VCC = 2.8 to 3.2 V; VCTR = 2.5 to 2.8 V; f = 2.4 ... 2.5 GHz
PIN = + 3 dBm (Large signal operation; PA in compression)
Parameter (Target Data)
Symbol
Typ. Value
Unit
Generator Impedance 4)
Interstage Termination 5)
ZGEN
ZIS
9-j1
1 + j 12.5
Ohms
Ohms
Load Impedance
ZLOAD
15 + j 3
Ohms
4) Generator impedance equals approximately conjugate complex input impedance: ZIN ZGEN*
5) ZIS is the impedance to be presented to the interstage output (pin 1 and pin 2) of the device.
The given load impedance is optimized for output power in saturated mode
(Bluetooth) and does not represent the conjugate complex output impedance of the
device since large signal conditions apply.
CGB240B
RF signal layer
RF ground plane
Gnd via
Reference planes for
impedance measurements
200µm FR4
epoxy substrate
Figure 2 Ground plane configuration and impedance reference planes.
The impedance reference plane is located at the center of the device pin, assuming
that a continuous microstrip ground plane exists and that low-inductance (e.g. 6-via)
connections of the device’s center ground pad (11) to the microstrip ground plane are
present.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 6/20

6 Page









CGB240B pdf, datenblatt
CGB240B Datasheet
R
1
C6
C5
C1 C
4
CGB240B
RF In
(SMA)
„White Dots“ =
Ground Vias
C7
C
3
C2
RF Out
(SMA)
Figure 6
Layout of CGB240B evaluation board tuned for IEEE802.11b WLAN
application (see application note 1).
Vc1 and Vc2 are connected together on the PCB.
Vctr1 and Vctr2 are connected together on the PCB.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 12/20

12 Page





SeitenGesamt 19 Seiten
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