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Teilenummer | DRDN010W |
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Beschreibung | (DRD xxxx W) Complex Array for Relay Drivers | |
Hersteller | Diodes | |
Logo | ||
Gesamt 9 Seiten SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W
t4U.com DRD (xxxx) WFeatures
e• Epitaxial Planar Die Construction
e• One Transistor and One Switching
hDiode in One Package
S• Lead Free By Design/RoHS Compliant (Note 1)
ta• "Green" Device (Note 2)
.DaMechanical Data
w• Case: SOT-363
w• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
w• Moisture sensitivity: Level 1 per J-STD-020C
m• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
oleadframe. Solderable per MIL-STD-202, Method 208
.c• Marking & Type Code Information: See Last
Page
• Ordering Information: See Last Page
U• Weight: 0.008 grams (approx.)
Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS
A
BC
G
H
K
J
D
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
t4P/N
eDRDNB16W
DRDPB16W
eDRDNB26W
hDRDPB26W
R1 (NOM) R2 (NOM)
1K 10K
1K 10K
220 4.7K
220 4.7K
DRDN010W/
DRDN005W
DRDP006W
SMaximum Ratings, Total Device @ TA = 25°C unless otherwise specified
R2
R1
DRDNB16W/
DRDNB26W
taCharacteristic
Power Dissipation (Note 3)
aThermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage and Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
200
625
-55 to +150
R2
R1
DRDPB16W/
DRDPB26W
Unit
mW
°C/W
°C
.DMaximum Ratings, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
wCharacteristic
Collector-Base Voltage
wCollector-Emitter Voltage
mEmitter-Base Voltage
w oCollector Current (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
45
18
5
1000
U.cMaximum Ratings, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified
et4Characteristic
eCollector-Base Voltage
hCollector-Emitter Voltage
SEmitter-Base Voltage
taCollector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
80
80
4.0
500
www.DaNotes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
V
V
V
mA
Unit
V
V
V
mA
DS30573 Rev. 8 - 2
1 of 9
DRD (xxxx) W
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© Diodes Incorporated
10
VCB = 80V
1
0.1
0.01
25
50 75 100
TA, AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
125
2.0
1.8
1.6 IC = 30mA
1.4
IC = 10mA
1.2
1.0 IC = 1mA
0.8
0.6
0.4 IC = 100mA
0.2
0
0.001
0.01
0.1
1
10 100
IB, BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region (DRDN005W)
0.500
0.450
0.400
IC
IB
=
10
0.350
0.300
0.250
0.200
TA = 25°C
TA = 150°C
0.150
0.100
0.050
0
1
TA = -50°C
10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 7, Collector Emitter Saturation Voltage
vs. Collector Current (DRDN005W)
10000
VCE = 5V
1000
TA = 150°C
100
TA = -50°C
TA = 25°C
10
1
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 8, DC Current Gain vs
Collector Current (DRDN005W)
1.0
0.9 VCE = 5V
0.8
TA = -50°C
0.7
0.6 TA = 25°C
0.5
0.4 TA = 150°C
0.3
0.2
0.1
0.1
1
10 100
IC, COLLECTOR CURRENT (mA)
Fig. 9, Base Emitter Voltage vs Collector Current (DRDN005W)
1000
VCE = 5V
100
10
1
1 10
IC, COLLECTOR CURRENT (mA)
Fig. 10, Gain Bandwidth Product vs
Collector Current (DRDN005W)
DS30573 Rev. 8 - 2
6 of 9
www.diodes.com
DRD (xxxx) W
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ DRDN010W Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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