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DRDN010W Schematic ( PDF Datasheet ) - Diodes

Teilenummer DRDN010W
Beschreibung (DRD xxxx W) Complex Array for Relay Drivers
Hersteller Diodes
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Gesamt 9 Seiten
DRDN010W Datasheet, Funktion
SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W
t4U.com DRD (xxxx) WFeatures
eEpitaxial Planar Die Construction
eOne Transistor and One Switching
hDiode in One Package
SLead Free By Design/RoHS Compliant (Note 1)
ta"Green" Device (Note 2)
.DaMechanical Data
wCase: SOT-363
wCase Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
wMoisture sensitivity: Level 1 per J-STD-020C
mTerminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
oleadframe. Solderable per MIL-STD-202, Method 208
.cMarking & Type Code Information: See Last
Page
Ordering Information: See Last Page
UWeight: 0.008 grams (approx.)
Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS
A
BC
G
H
K
J
D
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0°
All Dimensions in mm
t4P/N
eDRDNB16W
DRDPB16W
eDRDNB26W
hDRDPB26W
R1 (NOM) R2 (NOM)
1K 10K
1K 10K
220 4.7K
220 4.7K
DRDN010W/
DRDN005W
DRDP006W
SMaximum Ratings, Total Device @ TA = 25°C unless otherwise specified
R2
R1
DRDNB16W/
DRDNB26W
taCharacteristic
Power Dissipation (Note 3)
aThermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage and Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
200
625
-55 to +150
R2
R1
DRDPB16W/
DRDPB26W
Unit
mW
°C/W
°C
.DMaximum Ratings, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
wCharacteristic
Collector-Base Voltage
wCollector-Emitter Voltage
mEmitter-Base Voltage
w oCollector Current (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
45
18
5
1000
U.cMaximum Ratings, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified
et4Characteristic
eCollector-Base Voltage
hCollector-Emitter Voltage
SEmitter-Base Voltage
taCollector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
80
80
4.0
500
www.DaNotes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
V
V
V
mA
Unit
V
V
V
mA
DS30573 Rev. 8 - 2
1 of 9
DRD (xxxx) W
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© Diodes Incorporated






DRDN010W Datasheet, Funktion
10
VCB = 80V
1
0.1
0.01
25
50 75 100
TA, AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
125
2.0
1.8
1.6 IC = 30mA
1.4
IC = 10mA
1.2
1.0 IC = 1mA
0.8
0.6
0.4 IC = 100mA
0.2
0
0.001
0.01
0.1
1
10 100
IB, BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region (DRDN005W)
0.500
0.450
0.400
IC
IB
=
10
0.350
0.300
0.250
0.200
TA = 25°C
TA = 150°C
0.150
0.100
0.050
0
1
TA = -50°C
10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 7, Collector Emitter Saturation Voltage
vs. Collector Current (DRDN005W)
10000
VCE = 5V
1000
TA = 150°C
100
TA = -50°C
TA = 25°C
10
1
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 8, DC Current Gain vs
Collector Current (DRDN005W)
1.0
0.9 VCE = 5V
0.8
TA = -50°C
0.7
0.6 TA = 25°C
0.5
0.4 TA = 150°C
0.3
0.2
0.1
0.1
1
10 100
IC, COLLECTOR CURRENT (mA)
Fig. 9, Base Emitter Voltage vs Collector Current (DRDN005W)
1000
VCE = 5V
100
10
1
1 10
IC, COLLECTOR CURRENT (mA)
Fig. 10, Gain Bandwidth Product vs
Collector Current (DRDN005W)
DS30573 Rev. 8 - 2
6 of 9
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DRD (xxxx) W

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