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Número de pieza | APM2014NU | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Anpec Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM2014NU (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! APM2014NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/40A,
RDS(ON)=12mΩ (typ.) @ VGS=4.5V
RDS(ON)=18mΩ
(typ.)
@
V =2.5V
GS
GD
• Super High Dense Cell Design
• Reliable and Rugged
m• Lead Free Available (RoHS Compliant)
.coApplications
U• Power Management in Desktop Computer or
t4DC/DC Converters
S
Top View of TO-252
D
G
eS
e N-Channel MOSFET
ShOrdering and Marking Information
.DataAPM2014N
Lead Free Code
Handling Code
Temp. Range
Package Code
wwwAPM2014N U :
APM2014N
XXXXX
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
www.anpec.com.tw
1 page APM2014NU
Typical Characteristics (Cont.)
100
90
80
70
60
50
40
30
20
10
0
0
Output Characteristics
V =5,6,7,8,9,10V
GS
4V
3V
2.5V
2V
1234
5
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
40
36
32 V =2.5V
GS
28
24
20
16
V =4.5V
GS
12
8
4
0
0 20 40 60 80 100
ID - Drain Current (A)
Transfer Characteristics
100
90
80
T =-55oC
j
70
60 T =25oC
j
50 T =125oC
j
40
30
20
10
0
0123456
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
5
www.anpec.com.tw
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet APM2014NU.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM2014N | N-Channel Enhancement Mode MOSFET | Anpec Electronics |
APM2014NU | N-Channel Enhancement Mode MOSFET | Anpec Electronics |
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