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PDF DS1314 Data sheet ( Hoja de datos )
| Número de pieza | DS1314 | |
| Descripción | 3V Nonvolatile Controller with Lithium Battery Monitor | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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DS1314
3V Nonvolatile Controller with Lithium
Battery Monitor
FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Automatic VCC power-fail detection for 3.0V
or 3.3V power supplies
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
VCCO
VBAT
TOL
GND
1
2
3
4
8 VCCI
7 BW
6 CEO
5 CEI
DS1314 8-Pin DIP
(300-mil)
VCCO
VBAT
TOL
GND
1
2
3
4
8 VCCI
7 BW
6 CEO
5 CEI
DS1314S-2 8-Pin SOIC
(150-mil)
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
1
2
3
4
5
6
7
8
16 NC
15 VCCI
14 RST
13 NC
12 BW
11 CEO
10 NC
9 CEI
DS1314S 16-Pin SOIC
(300-mil)
NC
VCCO
NC
VBAT
NC
NC
TOL
NC
NC
GND
1
2
3
4
5
6
7
8
9
10
20 NC
19 VCCI
18 RST
17 NC
16 NC
15 BW
14 NC
13 CEO
12 NC
11 CEI
DS1314E 20-Pin TSSOP
PIN DESCRIPTION
VCCI
VCCO
VBAT
- Power Supply Input
- SRAM Power Supply Output
- Backup Battery Input
CEI - Chip Enable Input
CEO
TOL
- Chip Enable Output
- VCC Tolerance Select
BW - Battery Warning Output
(Open Drain)
RST
GND
NC
- Reset Output (Open Drain)
- Ground
- No Connection
DESCRIPTION
The DS1314 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
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111999
1 page  
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.5V to +7.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
DS1314
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage TOL=GND
Supply Voltage TOL=VCCO
Battery Supply Voltage
Logic 1 Input
Logic 0 Input
SYMBOL
VCCI
VCCI
VBAT
VIH
VIL
MIN
3.0
2.7
2.0
2.0
-0.3
TYP
3.3
3.0
MAX
3.6
3.3
6.0
VCCI+0.3
+0.8
(-40°C to +85°C)
UNITS NOTES
V1
V1
V1
V 1, 12
V 1, 12
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Operating Current (TTL inputs)
Operating Current (CMOS inputs)
RAM Supply Current
(VCCO ≥ VCCI -0.2V)
RAM Supply Current
(VCCO ≥ VCCI -0.3V)
VCC Trip Point (TOL=GND)
VCC Trip Point (TOL=VCCO)
VBAT Trip Point
VCC/VBAT Switch Point
(TOL=GND)
VCC/VBAT Switch Point
(TOL= VCCO)
Output Current @ 2.2V
Output Current @ 0.4V
Input Leakage
Output Leakage
Battery Monitoring Test Load
SYMBOL
ICC1
ICC2
VCC1
ICCO1
VCCTP
VCCTP
VBTP
VSW
VSW
IOH
IOL
IIL
ILO
RINT
MIN
2.8
2.5
2.5
2.6
2.4
-1
-1.0
-1.0
0.8
(-40°C to +85°C; VCCI = ≥VCCTP)
TYP MAX UNITS NOTES
50 200 µA
2
30 100 µA 2, 5
80 mA 3
140 mA
4
2.9 3.0
2.6 2.7
2.6 2.7
2.7 2.8
V
V
V
V
1
1
1
1
2.5 2.6
V
1
mA 7, 10
4 mA 7, 10
+1.0 µA
+1.0 µA
1.2 1.5 MΩ
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VSW)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Battery Current
IBAT
100 nA
2
Battery-Backup Current
ICCO2
500 µA
6
Supply Voltage
VCCO
VBAT-0.2
V1
CEO Output
VOHL
VBAT-0.2
V 1, 8
5 of 11
5 Page 
DS1314
DATA SHEET REVISION SUMMARY
The following represent the key differences between 12/16/96 and 06/12/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed VBAT max to 6V.
2. Changed VCCTP values to 2.8 - 3.0V (TOL = GND) and 2.5 - 2.7V (TOL = VCC).
3. Changed tBABW from 7s to 1s max.
4. Changed block diagram to show U L compliance.
The following represent the key differences between 06/12/97 and 08/29/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed AC test conditions.
2. Changed tPD to 20 max & 12 typ.
The following represent the key differences between 08/29/97 and 12/16/97 version of the DS1314 data
sheet. Please review this summary carefully.
1. Changed VCCI mins from 3.05V to 3.0V (TOL=GND) and from 275V to 2.7V (TOL=VCCD) (this
should have been done on 06/12/97 revision but was overlooked).
2. Specified Input Capacitance as being only for CEI , TOL and Output Capacitance as being only for
CEO , BW and RST . This is not a change but rather clarification.
3. Removed “preliminary” from title bar.
11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet DS1314.PDF ] | |
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