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GM71S4400C Schematic ( PDF Datasheet ) - Hynix Semiconductor

Teilenummer GM71S4400C
Beschreibung 1M x 4 Bit CMOS DRAM
Hersteller Hynix Semiconductor
Logo Hynix Semiconductor Logo 




Gesamt 9 Seiten
GM71S4400C Datasheet, Funktion
LG Semicon Co.,Ltd.
GM71C(S)4400C/CL
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Description
Features
The GM71C(S)4400C/CL is the new generation
dynamic RAM organized 1,048,576 words x 4 bit.
GM71C(S)4400C/CL has realized higher density,
higher performance and various functions by
utilizing advanced CMOS process technology. The
GM71C(S)4400C/CL offers Fast Page Mode as a
high speed access Mode. Multiplexed address
inputs permit the GM71C(S)4400C/CL to be
packaged in a standard 300mil 20(26) pin plastic
SOJ and standard 300mil 20(26) pin plastic
TSOP II. The package size provides high system
bit densities and is compatible with widely
available automated testing and insertion
equipment. System oriented features include single
power supply of 5V+/-10% tolerance, direct
interfacing capability with high performance logic
families such as Schottky TTL.
Pin Configuration
20 (26) SOJ
* 1,048,576 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC tRC
tPC
GM71C(S)4400C/CL-60 60 15 110 40
GM71C(S)4400C/CL-70 70 20 130 45
GM71C(S)4400C/CL-80 80 20 150 50
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
1.1mW (L-version)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 1024 Refresh Cycles/16ms
* 1024 Refresh Cycles/128ms (L-version)
* Battery Back Up Operation (L-version)
20 (26) TSOP II
I/O1
I/O2
WE
RAS
A9
A0 6
A1 7
A2 8
A3 9
VCC 10
VSS
I/O4
I/O3
CAS
OE
15 A8
14 A7
13 A6
12 A5
11 A4
(Top View)
I/O1 1
I/O2 2
WE 3
RAS 4
A9 5
20 VSS
19 I/O4
18 I/O3
17 CAS
16 OE
VSS 20
I/O4 19
I/O3 18
CAS 17
OE 16
1 I/O1
2 I/O2
3 WE
4 RAS
5 A9
A0 6
A1 7
A2 8
A3 9
VCC 10
15 A8
14 A7
13 A6
12 A5
11 A4
A8 15
A7 14
A6 13
A5 12
A4 11
6 A0
7 A1
8 A2
9 A3
10 VCC
NORMAL TYPE
REVERSE TYPE
(Top View)
1






GM71S4400C Datasheet, Funktion
LG Semicon
Read- Modify-Write Cycle
Symbol
Parameter
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Hold Time from WE
GM71C(S)4400C/CL
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Unit
Min Max Min Max Min Max
Note
150 - 180 - 200 - ns
80 - 95 - 105 - ns 10
35 - 45 - 45 - ns 10
50 - 60 - 65 - ns 10
15 - 20 - 20 - ns
Refresh Cycle
Symbol
Parameter
tCSR CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
tCHR CAS Hold Time
(CAS-before-RAS Refresh Cycle)
tRPC RAS Precharge to CAS Hold Time
tCPN CAS Precharge Time in Normal Mode
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Unit
Min Max Min Max Min Max
Note
10 - 10 - 10 - ns
10 - 10 - 10 - ns
10 - 10 - 10 - ns
10 - 10 - 10 - ns
Fast Page Mode Cycle
Symbol
Parameter
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Unit
Min Max Min Max Min Max
Note
tPC
tCP
tRASP
tACP
tRHCP
tCPW
Fast Page Mode Cycle Time
Fast Page Mode CAS Precharge Time
Fast Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
Fast Page Mode Read-Modify-Write Cycle
CAS Precharge to WE Delay Time
40 - 45 - 50 -
10 - 10 - 10 -
- 100,000 - 100,000 - 100,000
- 35 - 40 - 45
35 - 40 - 45 -
55 - 65 - 70 -
ns
ns
ns
ns
ns
ns
12
3,13,17
tPRWC
Fast Page Mode Read-Modify-Write Cycle
Time
80
-
95 - 100 -
ns
10
6

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