(PDF) D2025UK Datasheet - Metal Gate RF Silicon FET

Número de pieza	D2025UK
Descripción	Metal Gate RF Silicon FET
Fabricantes	Semelab
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No Preview Available ! MECHANICAL DATA C 12 4 A 3 B PIN 1 PIN 3 DRAIN GATE D DW PIN 2 PIN 4 SOURCE SOURCE DIM mm A 26.16 B 5.72 C 45° D 7.11 E 0.13 F 1.52 G 0.43 H 7.67 Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF TetraFET D2025UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 17.5W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 1A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5855 Issue 1 1 page

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