|
|
PDF FDQ7698S Data sheet ( Hoja de datos )
| Número de pieza | FDQ7698S | |
| Descripción | Dual Notebook Power Supply N-Channel PowerTrench | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDQ7698S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
August 2003
FDQ7698S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description
The FDQ7698S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology.
Features
• Q2: 15 A, 30V. RDS(on) = 7.5 mΩ @ VGS = 10V
RDS(on) = 9 mΩ @ VGS = 4.5V
• Q1: 12A, 30V. RDS(on) = 12 mΩ @ VGS = 10V
RDS(on) = 16 mΩ @ VGS = 4.5V
SO-14
S2
S2S2
G1G2
Vin
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a & 1b)
(Note 1c & 1d)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b)
(Note 1c & 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDQ7698S
FDQ7698S
13”
1 14
2 13
3 12
Q1
84 11
5 10
6 Q2 9
78
Q2 Q1
30 30
±16 ±16
15 12
50 50
2.4 1.8
1.3 1.1
−55 to +150
52 68
94 118
Units
V
V
A
W
°C
°C/W
Tape width
16mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDQ7698S Rev C1 (W)
1 page  
Typical Characteristics : Q2
10
ID = 15A
8
6
VDS = 10V
20V
15V
4
2
0
0 10 20 30 40 50 60 70 80 90
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
0.1
VGS = 10V
SINGLE PULSE
RθJA = 94oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6400
5600
4800
4000
3200
2400
1600
800
CRSS
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 94°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design.
RθJC(t) = r(t) * RθJC
RθJC = 94 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
100 1000
FDS7698S Rev C1 (W)
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDQ7698S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDQ7698S | Dual Notebook Power Supply N-Channel PowerTrench | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |