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DE375-501N21A Schematic ( PDF Datasheet ) - IXYS Corporation

Teilenummer DE375-501N21A
Beschreibung RF Power MOSFET
Hersteller IXYS Corporation
Logo IXYS Corporation Logo 




Gesamt 4 Seiten
DE375-501N21A Datasheet, Funktion
DE375-501N21A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
Symbol Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Maximum Ratings
500 V
500 V
VDSS = 500 V
ID25 = 25 A
RDS(on) = 0.22
PDC = 940 W
VGS
VGSM
Continuous
Transient
±20 V
±30 V
ID25 Tc = 25°C
IDM Tc = 25°C, pulse width limited by TJM
25 A
150 A
IAR
EAR
dv/dt
PDC
PDHS
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C
Derate 3.7W/°C above 25°C
21 A
30 mJ
5 V/ns
>200 V/ns
940 W
425
GATE
W
DRAIN
PDAMB
Tc = 25°C
4.5 W
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.16 C/W
0.36 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2.5 5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
0.22
SG1 SG2
SD1 SD2
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
gfs VDS = 15 V, ID = 0.5ID25, pulse test
17 S Advantages
TJ
-55
+175 °C
Optimized for RF and high speed
switching at frequencies to 50MHz
TJM
175
°C Easy to mount—no insulators needed
Tstg
-55
+175 °C
High power density
TL 1.6mm (0.063 in) from case for 10 s
300 °C
Weight
3g





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