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Número de pieza | UPA2751GR | |
Descripción | SWITCHING N- AND P-CHANNEL POWER MOS FET | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2751GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2751GR is asymmetrical dual N-Channel MOS
Field Effect Transistor designed for DC/DC converters of
notebook computers and so on.
FEATURES
• Asymmetric dual chip type
• Low on-state resistance, Low Ciss
CH1: RDS(on)2: 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)
Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V)
CH2: RDS(on)2: 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
Ciss = 480 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2751GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
CH2 CH1
14
5.37 Max.
CH2 1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
CH1 3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
CH1/CH2 VDSS
30
Gate to Source Voltage (VDS = 0 V)
CH1/CH2 VGSS
±20
Drain Current (DC)
CH1
ID(DC)
±9.0
Drain Current (pulse) Note1
CH2
CH1
ID(DC)
ID(pulse)
±8.0
±36
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
CH2
CH1/CH2
CH1/CH2
ID(pulse)
PT
PT
±32
1.7
2.0
Channel Temperature
CH1/CH2 Tch
150
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Single Avalanche Current Note3
Single Avalanche Energy Note3
CH1/CH2 Tstg –55 to + 150
CH1
IAS
9.0
CH1
EAS
8.1
CH2
IAS
8.0
CH2
EAS
6.4
V
V
A
A
A
A
W
W
°C
°C
A
mJ
A
mJ
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. TA = 25°C, Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15781EJ1V0DS00 (1st edition)
Date Published March 2002 NS CP(K)
Printed in Japan
© 2001
1 page A) CH1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40 Pulsed
ID = 4.5 A
30
VGS = 4 V
20
4.5 V
10 10 V
0
−50 −25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
Ciss
Coss
100 Crss
VGS = 0 V
10 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
µPA2751GR
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
4V 0V
10
1
0.1
0.01
0
Pulsed
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100 tr
10
tf
td(off)
td(on)
1
VDD = 15 V
VGS = 10 V
RG = 10 Ω
0.1
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30 12
25 VDD = 24 V
15 V
20 6 V
15
10
8
VGS
6
10 4
5 VDS
2
ID = 9 A
00
0 2 4 6 8 10 12 14 16 18 20 22
QG - Gate Charge - nC
Data Sheet G15781EJ1V0DS
5
5 Page B) CH2
100
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
RG = 25 Ω
VDD = 15 V
VGS = 20 0 V
Starting Tch = 25˚C
10 IAS = 8 A
EAS = 6.4 mJ
1
10 µ
100 µ
1m
L - Inductive Load - H
10 m
µPA2751GR
SINGLE AVALANCHE ENERGY
DERATING FACTOR
9120 RG = 25
VDD = 15 V
100 VGS = 20 0 V
IAS 8 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
Data Sheet G15781EJ1V0DS
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet UPA2751GR.PDF ] |
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