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PDF GT60M322 Data sheet ( Hoja de datos )
| Número de pieza | GT60M322 | |
| Descripción | Silicon N Channel IGBT | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT60M322 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed
: tf = 0.15 µs (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Rating
950
±25
60
120
25
50
76
190
150
−55 to 150
Unit
V
V
A
A
W
°C
°C
Max
0.66
1.38
Unit
°C/W
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Equivalent Circuit
Gate
Collector
Emitter
Marking
TOSHIBA
GT60M322
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2004-07-06
1 page  
Rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
IGBT stage
10−1
10−2
10−4
10−3
10−2
10−1
100
101
Pulse width tw (s)
102
trr, Irr – IF
1 100
trr
0.1 Irr
10
0.01
0
Common Collector
di/dt = −200 A/µs
: Tc = 25°C
: Tc = 125°C
1
5 10 15 20 25 30
Forward current IF (A)
GT60M322
IF – VF
50
−40 Common
collector
40 25
30
20
10
Tc = 125°C
0
01234
Forward voltage VF (V)
5
5 2004-07-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT60M322.PDF ] | |
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