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PDF WS6264 Data sheet ( Hoja de datos )
| Número de pieza | WS6264 | |
| Descripción | High Speed Super Low Power SRAM | |
| Fabricantes | wing shing | |
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High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
GENERAL DESCRIPTION
The WS6264 is a high performance, high speed and super low power CMOS Static Random
Access Memory organized as 8,192 words by 8bits and operates from a single 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed, super low power features and
maximum access time of 70ns in 5.0V operation. Easy memory expansion is provided by using two chip
enable inputs (/CE1, CE2) and active LOW output enable (/OE).
The WS6264 has an automatic power down feature, reducing the power consumption significantly
when chip is deselected. The WS6264 is available in JEDEC standard 28-pin SOP(300 mil) and PDIP
(600 mil) packages.
FEATURES
Operation voltage : 4.5 ~ 5.5V
Ultra low power consumption:
Operating current 1mA@1MHz & CMOS standby current 1.0uA (Typ.) in Vcc=5.0V
High speed access time: 70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 2.0V.
Easy expansion with /CE1, CE2 and /OE options.
PRODUCT FAMILY
Product Family Operating Temp.
WS6264LLFP
WS6264LLP
WS6264LLFPI
WS6264LLPI
0~70oC
-40~85oC
Vcc Range
4.5~5.5V
Speed (ns)
70
70
Standby Current (Typ.)
ICCSB1
1.0uA
1.0uA
Package Type
28 SOP
28 PDIP
28 SOP
28 PDIP
Rev. 1.0
1
1 page  
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
DC ELECTRICAL CHARACTERISTICS ( TA = 0o ~70oC, Vcc = 5.0V) )
Name
Parameter
Test Condition MIN TYP(1) MAX
Guaranteed Input Low
VIL Voltage (2)
Vcc=5.0V
-0.5 0.8
Guaranteed Input High
VIH Voltage (2)
Vcc=5.0V
2.2 Vcc+0.5
IIL Input Leakage Current
IOL Output Leakage Current
VOL
VOH
Output Low Voltage
Output High Voltage
VCC=MAX, VIN=0 to VCC
VCC=MAX, /CE1=VIh, or
CE2= VIL, or /OE=VIh ,or
/WE= VIL VIO=0V to VCC
VCC=MAX, IOL = 1mA
VCC=MIN, IOH = -1mA
-1
-1
2.4
1
1
0.4
Unit
V
V
uA
uA
V
V
Operating Power Supply
ICC Current
/CE1=VIL, IDQ=0mA,
F=FMAX =1/ tRC
30 mA
ICCSB TTL Standby Supply
/CE1=VIH, IDQ=0mA,
10 mA
ICCSB1 CMOS Standby Current
/CE1≧VCC-0.2V, CE2= 0.2V,
VIN≧VCC-0.2V or VIN≦0.2V,
1 10 uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are
included.
Rev. 1.0
5
5 Page 
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (Write Enable Controlled)
WRITE CYCLE2 (Chip Enable Controlled)
Rev. 1.0
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet WS6264.PDF ] | |
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