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PDF DIM400GDM33-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM400GDM33-A000 | |
| Descripción | Dual Switch IGBT Module Preliminary Information | |
| Fabricantes | Dynex | |
| Logotipo |  |
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DIM400GDM33-A000
Replaces September 2001, version DS5495-1.2
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM400GDM33-A000
Dual Switch IGBT Module
Preliminary Information
DS5495-1.2 September 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.2V
400A
800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM400GDM33-A000 is a dual switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GDM33-A000
Note: When ordering, please use the whole part number.
External connection
E1
E1
C2
C2
G1 G2
C1
C1
E2
E2
Fig. 1 Dual switch circuit diagram
C1
E1 C1
G1
C2 E2
G2
E2
E1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: G
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
1 page  
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
t Fall time
f
EOFF Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
EON Turn-on energy loss
Q Gate charge
g
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
t Fall time
f
EOFF Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
E Turn-on energy loss
ON
Qrr Diode reverse recovery charge
Irr Diode reverse recovery current
Erec Diode reverse recovery energy
DIM400GDM33-A000
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 1800V
RG(ON) = RG(OFF) = 4.7Ω
C = 68nF
ge
L ~ 100nH
IF = 400A, VR = 1800V,
dI /dt
F
=
2800A/µs
Min. Typ. Max. Units
- 1450 -
ns
- 200 - ns
- 500 - mJ
- 500 - ns
- 300 - ns
- 650 - mJ
- 12 - µC
- 280 - µC
- 400 -
A
- 300 - mJ
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 1800V
R
G(ON)
=
R
G(OFF)
=
4.7Ω
Cge = 68nF
L ~ 100nH
IF = 400A, VR = 1800V,
dIF/dt = 2000A/µs
Min. Typ. Max. Units
- 1700 -
ns
- 250 - ns
- 600 - mJ
- 550 - ns
- 300 - ns
- 850 - mJ
- 450 - µC
- 430 -
A
- 550 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet DIM400GDM33-A000.PDF ] | |
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