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DIM400DDM17-A000 Schematic ( PDF Datasheet ) - Dynex

Teilenummer DIM400DDM17-A000
Beschreibung Dual Switch IGBT Module
Hersteller Dynex
Logo Dynex Logo 




Gesamt 10 Seiten
DIM400DDM17-A000 Datasheet, Funktion
DIM400DDM17-A000
Replaces September 2001, version DS5449-2.3
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM400DDM17-A000
Dual Switch IGBT Module
DS5449-3.0 March 2002
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
400A
IC(PK)
(max)
800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400DDM17-A000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDM17-A000
Note: When ordering, please use the whole part number.
5(E1)
6(G1)
7(C1)
1(E1)
3(C1)
2(C2)
12(C2)
11(G2)
10(E2)
4(E2)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






DIM400DDM17-A000 Datasheet, Funktion
DIM400DDM17-A000
TYPICAL CHARACTERISTICS
900
Common emitter.
Tcase = 25˚C
800 Vce is measured at power busbars
and not the auxiliary terminals
700
600
500
400
300
200
100
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
900
Common emitter.
800
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
700
600
500
400
300
200
100
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
200
Conditions:
Vce = 900V
175 Tc = 125°C
Rg = 4.7Ω
150
125
100
75
50
25 Eoff
Eon
Erec
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Conditions:
Vce = 900V
IC = 400A
Tc = 125°C
300
200
100
Eoff
Eon
Erec
0
0 4 8 12 16
Gate Resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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