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DIM2400ESM17-A000 Schematic ( PDF Datasheet ) - Dynex

Teilenummer DIM2400ESM17-A000
Beschreibung Single Switch IGBT Module
Hersteller Dynex
Logo Dynex Logo 




Gesamt 10 Seiten
DIM2400ESM17-A000 Datasheet, Funktion
DIM2400ESM17-A000
Replaces May 2001, version 5447-2.0
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM2400ESM17-A000
Single Switch IGBT Module
DS5447-3.0 March 2002
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
2400A
IC(PK)
(max)
4800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM2400ESM17-A000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESM17-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






DIM2400ESM17-A000 Datasheet, Funktion
DIM2400ESM17-A000
TYPICAL CHARACTERISTICS
5400
4800
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
4200
3600
3000
2400
1800
1200
600
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
5400
4800
4200
Common emitter
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
3600
3000
2400
1800
1200
600
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1400
Tcase = 125˚C
VCC = 900V,
1200 Rg = 1Ω
L ~ 50nH
1000
Eoff
800
Eon
600 Erec
400
200
0
0 400 800 1200 1600 2000 2400
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
3000
Tcase = 125˚C
IC = 2400A
2500
Rg = 1Ω
L ~ 50nH
2000
1500
Eon
Eoff
1000
500
Erec
0
0 0.5
1 1.5 2 2.5 3 3.5 4 4.5
Gate resistance, Rg - (Ohms)
5
Fig. 6 Typical switching energy vs gate resistance
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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