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DIM1200ESM33-A000 Schematic ( PDF Datasheet ) - Dynex

Teilenummer DIM1200ESM33-A000
Beschreibung Single Switch IGBT Module Preliminary Information
Hersteller Dynex
Logo Dynex Logo 




Gesamt 10 Seiten
DIM1200ESM33-A000 Datasheet, Funktion
DIM1200ESM33-A000
Replaces August 2001, version DS5492-1.1
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
DIM1200ESM33-A000
Single Switch IGBT Module
Preliminary Information
DS5492-2.0 October 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.2V
1200A
2400A
Aux C
External connection
C1 C2
C3
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM1200ESM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM1200ESM33-A000
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






DIM1200ESM33-A000 Datasheet, Funktion
DIM1200ESM33-A000
TYPICAL CHARACTERISTICS
2400
Common emitter.
2200 Tcase = 25˚C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
1 234 5
Collector-emitter voltage, Vce - (V)
6
Fig. 3 Typical output characteristics
2500
2000
Conditions:
Tcase = 125˚C
Rg = 1.5 Ohms
Vcc = 1800V
Cge = 120nF
2400
Common emitter.
2200 Tcase = 125˚C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
2 34 567
Collector-emitter voltage, Vce - (V)
8
Fig. 4 Typical output characteristics
4000
Conditions:
Tcase = 125˚C
IC = 1200A
Vcc = 1800V
3200 Cge = 120nF
1500
2400
1000
1600
500
Eon
Eoff
Erec
0
0 200 400 600 800 1000 1200
Collector Current, IC - (A)
Fig. 5 Typical switching energy vs collector current
800
0
12
Eon
Eoff
Erec
34
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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