|
|
Teilenummer | DG858BW45 |
|
Beschreibung | Gate Turn-off Thyristor | |
Hersteller | Dynex | |
Logo | ||
Gesamt 19 Seiten Replaces July 1999 version, DS4096-3.0
FEATURES
q Double Side Cooling
q High Reliability In Service
q High Voltage Capability
q Fault Protection Without Fuses
q High Surge Current Capability
q Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
q Variable speed A.C. motor drive inverters (VSD-AC)
q Uninterruptable Power Supplies
q High Voltage Converters
q Choppers
q Welding
q Induction Heating
q DC/DC Converters
VOLTAGE RATINGS
Type Number
DG858BW45
Repetitive Peak
Off-state Voltage
VDRM
V
4500
DG858BW45
DG858BW45
Gate Turn-off Thyristor
DS4096-4.0 January 2000
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
3000A
4500V
1180A
1000V/µs
300A/µs
Package outline type code: W.
See Package Details for further information.
Figure 1. Package outline
Repetitive Peak Reverse
Voltage
VRRM
V
16
Conditions
Tvj = 125oC, IDM = 100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
IT(RMS)
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF 3000
Mean on-state current
THS = 80oC. Double side cooled, half sine 50Hz 1180
RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz 1850
Units
A
A
A
1/19
DG858BW45
5500
5000
Conditions;
IG(ON) = 10A
dc
4500
4000
3500
180˚
120˚
3000
2500
2000
60˚
30˚
1500
1000
500
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
60 70 80 90 100 110 120 130
Maximum permissible case temperature - (˚C)
Figure 7. Steady state rectangular wave conduction loss - double side cooled
4000
3500
Conditions;
IG(ON) = 10A
3000
2500
2000
30˚
120˚
90˚
60˚
180˚
1500
1000
500
0
0 200 400 600 800 1000 1200 80 90 100 110 120 130
Mean on-state current IT(AV) - (A)
Maximum permissible case temperature - (˚C)
Figure 8. Steady state sinusoidal wave conduction loss - double side cooled
6/19
6 Page DG858BW45
16000
14000
12000
Conditions:
Tj = 125˚C
VDM = VDRM
dIGQ/dt = 40A/µs
10000
Cs = 4.0µF
Cs = 3.0µF
Cs = 2.5µF
Cs = 2.0µF
8000
6000
4000
2000
0
0
500
1000
1500
2000
2500
3000
On-state current IT - (A)
Figure 20. Turn-off energy vs on-state current
25.0
22.5
Conditions:
Cs = 3.0µF
dIGQ/dt = 40A/µs
20.0
Tj = 125˚C
Tj = 25˚C
3500
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
500
1000
1500
2000
2500
On-state current IT - (A)
Figure 21. Gate storage time vs on-state current
3000
12/19
12 Page | ||
Seiten | Gesamt 19 Seiten | |
PDF Download | [ DG858BW45 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DG858BW45 | Gate Turn-off Thyristor | Dynex |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |