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PDF DG411 Data sheet ( Hoja de datos )

Número de pieza DG411
Descripción Monolithic Quad SPST / CMOS Analog Switches
Fabricantes Intersil 
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®
Data Sheet
DG411, DG412, DG413
June 20, 2007
FN3282.13
Monolithic Quad SPST, CMOS Analog
Switches
The DG411 series monolithic CMOS analog switches are
drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
throw (SPST) analog switches, and TTL and CMOS
compatible digital inputs.
These switches feature lower analog ON-resistance (<35Ω)
and faster switch time (tON<175ns) compared to the DG211
or DG212. Charge injection has been reduced, simplifying
sample and hold applications.
The improvements in the DG411 series are made possible
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling 40VP-P signals. Power supplies may be
single-ended from +5V to 44V, or split from ±5V to ±20V.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON-resistance variation with analog
signals is quite low over a ±15V analog input range. The
switches in the DG411 and DG412 are identical, differing only
in the polarity of the selection logic. Two of the switches in the
DG413 (#2 and #3) use the logic of the DG211 and DG411
(i.e., a logic “0” turns the switch ON) and the other two
switches use DG212 and DG412 positive logic. This permits
independent control of turn-on and turn-off times for SPDT
configurations, permitting “break-before-make” or “make-
before-break” operation with a minimum of external logic.
Features
• ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW
• Fast Switching Action
- tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns
- tOFF (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145ns
• Low Charge Injection
• Upgrade from DG211, DG212
• TTL, CMOS Compatible
• Single or Split Supply Operation
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Audio Switching
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1993, 1994, 1997, 1999, 2002, 2004-2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

1 page




DG411 pdf
DG411, DG412, DG413
Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified. (Continued)
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Note 4)
Source OFF Leakage Current,
IS(OFF)
V+ = 16.5V, V- = -16.5V, VD = ±15.5V, VS = 15.5V
25
Full
-0.25
-5
Drain OFF Leakage Current,
ID(OFF)
25 -0.25
Full -5
Channel ON Leakage Current,
ID(ON) + IS(ON)
V+ = 16.5V, V- = -16.5V, VS = VD = ±15.5V
25 -0.4
Full -10
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 16.5V, V- = -16.5V, VIN = 0V or 5V
25 -
85 -
Negative Supply Current, I-
25 -1
85 -5
Logic Supply Current, IL
25 -
85 -
Ground Current, IGND
25 -1
85 -5
TYP
(Note 5)
±0.1
-
±0.1
-
±0.1
-
0.0001
-
-0.0001
-
0.0001
-
-0.0001
-
MAX
(Note 4) UNITS
0.25 nA
+5 nA
0.25 nA
+5 nA
0.4 nA
+10 nA
1 μA
5 μA
- μA
- μA
1 μA
5 μA
- μA
- μA
Electrical Specifications (Single Supply) Test Conditions: V+ = +12V, V- = 0V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified.
PARAMETER
TEST CONDITIONS
TEMP
(°C)
MIN
(Note 4)
TYP
(Note 5)
MAX
(Note 4)
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
RL = 300Ω, CL = 35pF,
VS = 8V, (Figure 1)
25 - 175 250
85 -
- 315
Turn-OFF Time, tOFF
25 - 95 125
85 -
- 140
Break-Before-Make Time Delay
DG413 Only, RL = 300Ω,
CL = 35pF, VS = 8V
25 - 25 -
Charge Injection, Q
CL = 10nF, VG = 6.0V, RG = 0Ω
25
-
25
-
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON-Resistance,
rDS(ON)
IS = -10mA, VD = 3V, 8V
V+ = 10.8V
Full 0
25 -
Full -
- 12
40 80
- 100
UNITS
ns
ns
ns
ns
ns
pC
V
Ω
Ω
5 FN3282.13
June 20, 2007

5 Page





DG411 arduino
DG411, DG412, DG413
Thin Shrink Small Outline Plastic Packages (TSSOP)
N
INDEX
AREA
E1
-B-
E
0.25(0.010) M B M
GAUGE
PLANE
123
0.05(0.002) SEATING PLANE
-A- D
A
0.25
0.010
L
-C-
e A1
b
0.10(0.004) M C A M B S
α
A2
0.10(0.004)
c
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimen-
sions are not necessarily exact. (Angles in degrees)
M16.173
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INCHES
MILLIMETERS
SYMBOL MIN MAX MIN MAX NOTES
A
-
0.043
-
1.10
-
A1 0.002 0.006 0.05 0.15
-
A2
0.033 0.037 0.85
0.95
-
b
0.0075 0.012 0.19
0.30
9
c
0.0035 0.008 0.09
0.20
-
D
0.193 0.201 4.90
5.10
3
E1
0.169 0.177 4.30
4.50
4
e 0.026 BSC
0.65 BSC
-
E
0.246 0.256 6.25
6.50
-
L
0.020 0.028 0.50
0.70
6
N 16
16 7
a
0o 8o 0o 8o
-
Rev. 1 2/02
11 FN3282.13
June 20, 2007

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