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Número de pieza | P402 | |
Descripción | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P402 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
40A
Description
The P400 series of Integrated Power Circuits con-
sists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
P400
Units
ID
IFSM
I2t
I2√t
VRRM
VINS
TJ
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
40
80
385
400
745
680
7450
400 to 1200
2500
- 40 to 125
A
°C
A
A
A2s
A2s
A2√s
V
V
°C
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1
1 page P400 Series
Bulletin I2776 rev. E 04/99
120
100
80
60
40
20
0
0
180°
(Sine)
P400 Series
T J = 125°C
1 K/W
1.5 K/W
2 K/W
3 K/W
5 K/W
10 K/W
5 10 15 20 25 30 35 400 25 50 75 100 125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
30
180°
25 120°
90°
60°
20 30°
15 RMS Limit
10 Conduction angle
5
P400 Series
TJ = 125°C
Per Junction
0
0 5 10 15 20
Average On-state Current (A)
Fig. 2 - On-state Power Loss Characteristics
40
DC
35 180°
120°
30 90°
60°
25 30°
20
RMS Limit
15
Conduction Period
10
P400 Series
5 T J = 125°C
Per Junction
0
0 5 10 15 20 25 30 35
Average On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics
130
Fully Turned-on
120
110
180°
(Rect)
100
90
80
P400 Series
Per Module
180°
( Sine)
70
0
5 10 15 20 25 30 35 40 45
Total Output Current (A)
Fig. 4 - Current Ratings Characteristics
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1 000
TJ = 25 °C
100
T J = 125 °C
10
P400 Series
Per Junction
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantaneous On-state Voltage (V)
Fig. 5 - On-state Voltage Drop Characteristics
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet P402.PDF ] |
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